Invention Grant
- Patent Title: Epitaxy layer and method of forming the same
- Patent Title (中): 外延层及其形成方法
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Application No.: US11622490Application Date: 2007-01-12
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Publication No.: US07592619B2Publication Date: 2009-09-22
- Inventor: Pang-Yen Tsai , Liang-Gi Yao , Chun-Chieh Lin , Wen-Chin Lee , Shih-Chang Chen
- Applicant: Pang-Yen Tsai , Liang-Gi Yao , Chun-Chieh Lin , Wen-Chin Lee , Shih-Chang Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.
Public/Granted literature
- US20070117358A1 EPITAXY LAYER AND METHOD OF FORMING THE SAME Public/Granted day:2007-05-24
Information query
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