发明授权
- 专利标题: Voltage down converter for high speed memory
- 专利标题(中): 降压转换器用于高速存储器
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申请号: US11781581申请日: 2007-07-23
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公开(公告)号: US07593281B2公开(公告)日: 2009-09-22
- 发明人: Hong Beom Pyeon , Bruce Millar
- 申请人: Hong Beom Pyeon , Bruce Millar
- 申请人地址: unknown Ottawa, Ontario
- 专利权人: MOSAID Technologies Incorporated
- 当前专利权人: MOSAID Technologies Incorporated
- 当前专利权人地址: unknown Ottawa, Ontario
- 代理机构: Borden Ladner Gervais LLP
- 代理商 Anne Kinsman
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array.
公开/授权文献
- US20080186790A1 VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY 公开/授权日:2008-08-07
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