发明授权
- 专利标题: Optimized correction of wafer thermal deformations in a lithographic process
- 专利标题(中): 光刻过程中晶片热变形的优化校正
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申请号: US11812801申请日: 2007-06-21
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公开(公告)号: US07595496B2公开(公告)日: 2009-09-29
- 发明人: Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
- 申请人: Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G21K5/00
- IPC分类号: G21K5/00
摘要:
A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
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