发明授权
US07599228B1 Flash memory device having increased over-erase correction efficiency and robustness against device variations
有权
闪存器件具有增加的过擦除校正效率和针对器件变化的鲁棒性
- 专利标题： Flash memory device having increased over-erase correction efficiency and robustness against device variations
- 专利标题（中）： 闪存器件具有增加的过擦除校正效率和针对器件变化的鲁棒性
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申请号： US10976760申请日： 2004-11-01
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公开(公告)号： US07599228B1公开(公告)日： 2009-10-06
- 发明人: Qiang Lu , Kuo-Tung Chang , Kazuhiro Mizutani , Sung-Chul Lee , Sheung-Hee Park , Ming-Sang Kwan
- 申请人： Qiang Lu , Kuo-Tung Chang , Kazuhiro Mizutani , Sung-Chul Lee , Sheung-Hee Park , Ming-Sang Kwan
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion L.L.C.
- 当前专利权人： Spansion L.L.C.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A memory device is provided including circuitry for correcting an over-erased memory cell in the memory device. The memory device may include a substrate. A control gate and a floating gate may be formed over the substrate. The memory device may include a source region and a drain region. A first resistive element may be coupled between the source region and the control gate.