发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11822191申请日： 2007-07-03
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公开(公告)号： US07601635B2公开(公告)日： 2009-10-13
- 发明人: Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
- 申请人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2003-299793 20030825
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/336
摘要：
For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.
公开/授权文献
- US20070259512A1 Method of manufacturing a semiconductor device 公开/授权日：2007-11-08
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