公开(公告)号：US20050048708A1

公开(公告)日：2005-03-03

申请号：US10923045

申请日：2004-08-23

申请人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

发明人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/311

CPC分类号： H01L27/11526 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/32053 ,  H01L21/76886 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/4916 ,  H01L29/6659 ,  H01L29/7833

摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

摘要翻译： 为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件 半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。 多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。 沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

公开(公告)号：US07601635B2

公开(公告)日：2009-10-13

申请号：US11822191

申请日：2007-07-03

申请人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

发明人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

IPC分类号： H01L21/4763 ,  H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/32053 ,  H01L21/76886 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/4916 ,  H01L29/6659 ,  H01L29/7833

摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

摘要翻译： 为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件 半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。 多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。 沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

公开(公告)号：US20070259512A1

公开(公告)日：2007-11-08

申请号：US11822191

申请日：2007-07-03

申请人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

发明人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

IPC分类号： H01L21/3205

CPC分类号： H01L27/11526 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/32053 ,  H01L21/76886 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/4916 ,  H01L29/6659 ,  H01L29/7833

摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

公开(公告)号：US07256125B2

公开(公告)日：2007-08-14

申请号：US10923045

申请日：2004-08-23

申请人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

发明人： Kentaro Yamada ,  Masato Takahashi ,  Tatsuyuki Konagaya ,  Takeshi Katoh ,  Masaki Sakashita ,  Koichiro Takei ,  Yasuhiro Obara ,  Yoshio Fukayama

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/32053 ,  H01L21/76886 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/4916 ,  H01L29/6659 ,  H01L29/7833

摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

摘要翻译： 为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件 半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。 多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。 沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

公开(公告)号：US07884960B2

公开(公告)日：2011-02-08

申请号：US11588209

申请日：2006-10-27

申请人： Akihiro Suzuki ,  Kentaro Yamada ,  Koji Nishiyama ,  Tooru Nakatani ,  Yoh Nakamura

发明人： Akihiro Suzuki ,  Kentaro Yamada ,  Koji Nishiyama ,  Tooru Nakatani ,  Yoh Nakamura

IPC分类号： G06F15/00 ,  G06F3/12 ,  G06K1/00

CPC分类号： G06F21/608 ,  G06F3/1204 ,  G06F3/1208 ,  G06F3/126 ,  G06F3/1285

摘要： A user equipment issues a job for a plurality of documents to a printing system by one operation. The user equipment assigns attributes to the job, the attributes including the specification of collation/uncollation, the designation of processing start instruction wait, the designation of exclusive processing, and the designation of password input wait. The printing system effects printing of the plurality of documents corresponding to attributes of the documents under control of a job scheduling device. The job scheduling device carries out the pausing of documents included in the job, the modification of attributes, addressing of document receiving failures, and search of a document whose format is to be converted, thereby making it possible to efficiently print the plurality of documents.

摘要翻译： 用户设备通过一次操作向打印系统发出多个文档的作业。 用户设备为作业分配属性，包括归类/解卷积的指定，处理开始指令等待的指定，专有处理的指定以及密码输入等待的指定等属性。 打印系统在作业调度装置的控制下实现与文档的属性对应的多个文档的打印。 作业调度装置执行作业中包括的文档的暂停，属性的修改，文档接收失败的寻址，以及对要格式化的文档的搜索，从而可以有效地打印多个文档。

公开(公告)号：US09020586B2

公开(公告)日：2015-04-28

申请号：US13469589

申请日：2012-05-11

申请人： Kentaro Yamada ,  Yukiyasu Kamitani

发明人： Kentaro Yamada ,  Yukiyasu Kamitani

IPC分类号： A61B5/04 ,  G01R33/48 ,  A61B5/0484 ,  A61B5/055 ,  G06F3/01

CPC分类号： G01R33/4806 ,  A61B5/04842 ,  A61B5/055 ,  A61B2576/026 ,  G06F3/015

摘要： What is provides is a brain activity deducing apparatus, a brain activity deducing method, a brain activity measuring apparatus, a brain activity measuring method, and a brain-machine interface device, capable of deducing a brain activity signal of a source subject. The information presentation device presents perceptible information to the first subject. The brain activity measurement device acquires a brain activity signal representing a brain activity of the first subject. The individual conversion device deduces a brain activity signal of the second subject from the acquired brain activity signal based on the individual conversion information, which correlates the brain activity signal of the first subject and the brain activity signal of the second subject.

摘要翻译： 提供的是能够推导源受试者的脑活动信号的脑活动推导装置，脑活动推导方法，脑活动测量装置，脑活动测量方法和脑机接口装置。 信息呈现装置向第一主体呈现可察觉的信息。 脑活动测量装置获取表示第一受试者的大脑活动的脑活动信号。 各个转换装置基于个体转换信息从所获取的大脑活动信号中推导出第二受试者的脑活动信号，其将第一受试者的大脑活动信号与第二受试者的脑活动信号相关联。

公开(公告)号：US08868174B2

公开(公告)日：2014-10-21

申请号：US13202784

申请日：2010-02-22

申请人： Masaaki Sato ,  Takahito Tamagawa ,  Okito Yamashita ,  Yusuke Takeda ,  Mitsuo Kawato ,  Kentaro Yamada ,  Masahiro Kimura ,  Akihiro Toda ,  Tatsuya Okabe

发明人： Masaaki Sato ,  Takahito Tamagawa ,  Okito Yamashita ,  Yusuke Takeda ,  Mitsuo Kawato ,  Kentaro Yamada ,  Masahiro Kimura ,  Akihiro Toda ,  Tatsuya Okabe

IPC分类号： A61B5/04 ,  B25J13/00 ,  G06F3/01 ,  G06N99/00 ,  A61B5/0476 ,  A61B5/00 ,  A61B5/055

CPC分类号： B25J13/00 ,  A61B5/0042 ,  A61B5/0059 ,  A61B5/0073 ,  A61B5/0476 ,  A61B5/055 ,  A61B5/4064 ,  A61B5/6814 ,  G06F3/015 ,  G06N99/005

摘要： A brain information output apparatus includes an intention determination information storage unit in which two or more pieces of intention determination information can be stored, with each intention determination information including a pair of an intention identifier, and a learning feature amount group including one or more feature amounts extracted from second learning data that is obtained by converting first learning data into intracerebral brain activity data, the first leaning data being acquired from the outside of the cranium of a user when the user performs a trial according to one intention; a first brain activity data acquiring unit that acquires first brain activity data from the outside of the cranium of a user; a second brain activity data acquiring unit that converts the first brain activity data to intracerebral brain activity data, and acquires second brain activity data; a feature amount group acquiring unit that acquires, from the second brain activity data, an input feature amount group including one or more feature amounts; an intention identifier acquiring unit that acquires an intention identifier corresponding to the input feature amount group based on the two or more pieces of intention determination information; and an intention identifier output unit that outputs the intention identifier.

摘要翻译： 大脑信息输出装置包括意图确定信息存储单元，其中可以存储两个或多个意图确定信息，每个意图确定信息包括一对意图标识符和包括一个或多个特征的学习特征量组 通过将第一学习数据转换为大脑脑活动数据而获得的第二学习数据提取的量，当用户根据一种意图进行试验时，从用户头颅的外部获取第一倾斜数据; 第一脑活动数据获取单元，从用户的头颅的外部获取第一脑活动数据; 第二大脑活动数据获取单元，将第一脑活动数据转换为大脑脑活动数据，并获取第二大脑活动数据; 特征量组获取单元，从第二大脑活动数据获取包括一个或多个特征量的输入特征量组; 意图标识符获取单元，基于所述两个或多个意图确定信息来获取与所述输入特征量组相对应的意图识别符; 以及输出意图标识符的意图标识符输出单元。

公开(公告)号：US20110188534A1

公开(公告)日：2011-08-04

申请号：US13016202

申请日：2011-01-28

申请人： Shinya Nishimura ,  Kentaro Yamada

发明人： Shinya Nishimura ,  Kentaro Yamada

IPC分类号： G01K17/00 ,  G01N25/00

CPC分类号： G01N25/4866

摘要： A differential scanning calorimeter (1) includes: a sample container (2) for receiving a measurement sample; a reference substance container (3) for receiving a reference substance; a heat sink (10); a thermal resistance (5), which is connected between the sample container and the heat sink, and between the reference substance container and the heat sink to form heat flow paths therebetween; a sample-side thermocouple (7), which is thermally connected to the thermal resistance at a portion in the vicinity of the sample container with its hot-junction (7c) being insulated; and a reference substance-side thermocouple (8), which is thermally connected to the thermal resistance at a portion in the vicinity of the reference substance container with its hot junction (8c) being insulated, in which the sample-side thermocouple and the reference substance-side thermocouple output a heat flow difference signal indicating a temperature difference between the measurement sample and the reference substance.

摘要翻译： 差示扫描量热计（1）包括：用于接收测量样品的样品容器（2） 用于接收参考物质的参考物质容器（3）; 散热片（10）; 连接在样品容器和散热器之间以及参比物质容器和散热器之间的热阻（5），以在它们之间形成热流动路径; 样品侧热电偶（7），其热连接（7c）绝缘在热连接到样品容器附近的部分处的热阻; 和参考物质侧热电偶（8），其热连接（8c）被绝缘地与参考物质容器附近的部分处的热电阻热连接，其中样品侧热电偶和参考 物质侧热电偶输出表示测量样品和参考物质之间的温度差的热流差信号。

公开(公告)号：US20090180142A1

公开(公告)日：2009-07-16

申请号：US12382051

申请日：2009-03-06

申请人： Akihiro Suzuki ,  Kentaro Yamada ,  Koji Nishiyama ,  Tooru Nakatani ,  Yoh Nakamura

发明人： Akihiro Suzuki ,  Kentaro Yamada ,  Koji Nishiyama ,  Tooru Nakatani ,  Yoh Nakamura

IPC分类号： G06F3/12

CPC分类号： G06F21/608 ,  G06F3/1204 ,  G06F3/1208 ,  G06F3/126 ,  G06F3/1285

摘要： A user equipment issues a job for a plurality of documents to a printing system by one operation. The user equipment assigns attributes to the job, the attributes including the specification of collation/uncollation, the designation of processing start instruction wait, the designation of exclusive processing, and the designation of password input wait. The printing system effects printing of the plurality of documents corresponding to attributes of the documents under control of a job scheduling device. The job scheduling device carries out the pausing of documents included in the job, the modification of attributes, addressing of document receiving failures, and search of a document whose format is to be converted, thereby making it possible to efficiently print the plurality of documents.

公开(公告)号：US20070013510A1

公开(公告)日：2007-01-18

申请号：US11482785

申请日：2006-07-10

申请人： Kentaro Yamada ,  Yuji Hasegawa ,  Takahiro Nakamura

发明人： Kentaro Yamada ,  Yuji Hasegawa ,  Takahiro Nakamura

IPC分类号： G08B1/08

CPC分类号： G01S13/74 ,  G01S13/46 ,  G01S13/86 ,  G01S15/46 ,  G01S15/74 ,  G01S2013/466 ,  G01S2015/465

摘要： A position management system including two or more types of detection tags provided to objects whose positions are to be detected, detectors provided corresponding to the detection tags, and a position data processor, in which the detection tags complement detection abilities with each other, in which when a detector receives a signal from a detection tag provided to an object, the detector generates detection result data including a unique tag ID which is assigned to the detection tag and a device ID which is assigned to the detector, and in which the position data processor processes the detection result data acquired from the detector and arrangement data of the detector in order to specify a position of the object.

摘要翻译： 一种位置管理系统，包括提供给要检测其位置的对象的两种或多种类型的检测标签，与检测标签相对应的检测器，以及位置数据处理器，其中检测标签互补检测能力，其中 当检测器从提供给对象的检测标签接收到信号时，检测器产生检测结果数据，该检测结果数据包括分配给检测标签的唯一标签ID和被分配给检测器的设备ID，并且其中位置数据 处理器处理从检测器获取的检测结果数据和检测器的布置数据，以便指定对象的位置。