Invention Grant
US07602042B2 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
有权
非易失性存储器件，非易失性存储器件阵列及其制造方法
- Patent Title: Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
- Patent Title (中): 非易失性存储器件，非易失性存储器件阵列及其制造方法
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Application No.: US11270459Application Date: 2005-11-10
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Publication No.: US07602042B2Publication Date: 2009-10-13
- Inventor: Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
- Applicant: Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2004-0091497 20041110
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
Public/Granted literature
- US20060098472A1 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same Public/Granted day:2006-05-11
Information query
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