发明授权
- 专利标题： Optical semiconductor device and manufacturing method for same
- 专利标题（中）： 光半导体器件及其制造方法
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申请号： US11149258申请日： 2005-06-10
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公开(公告)号： US07605049B2公开(公告)日： 2009-10-20
- 发明人: Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
- 申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JPP2004-179366 20040617
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/311 ; G02B6/36
摘要：
A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.