公开(公告)号：US07982276B2

公开(公告)日：2011-07-19

申请号：US12950378

申请日：2010-11-19

申请人： Takaki Iwai

发明人： Takaki Iwai

IPC分类号： H01L31/00 ,  H01L27/14

CPC分类号： H01L27/1443 ,  H01L27/0664 ,  H01L27/14683 ,  H01L31/10

摘要： An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concentration n-type cathode contact layer (9); a photodiode (2) made of the anode layer (27) and the cathode contact layer (9); and an NPN transistor (3) formed on the n-type epitaxial layer (26). The anode can be substantially completely depleted in the case where the anode layer (27) has its dopant concentration peak in the vicinity of the interface between the silicon substrate (1) and the n-type epitaxial layer (26). Therefore, high speed and high light receiving sensitivity characteristics can be obtained, and further, any influence of auto-doping from peripheral embedding layers can be controlled, so that a depletion layer can be stably formed in the anode. Thus, a photodiode characterized in its high speed and high light receiving sensitivity for short wavelength light and a transistor characterized in its high speed can be mounted on the same semiconductor substrate.

公开(公告)号：US07736923B2

公开(公告)日：2010-06-15

申请号：US12078831

申请日：2008-04-07

申请人： Takaki Iwai

发明人： Takaki Iwai

IPC分类号： H01L21/00

CPC分类号： H01L31/153 ,  H01L2224/32145 ,  H01L2924/10157 ,  H01S5/02248 ,  H01S5/02292

摘要： An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.

摘要翻译： 光学半导体器件包括：第一导电类型的第一半导体区域; 形成在第一半导体区域上的第一导电型第二半导体区域; 形成在第二半导体区域上的第二导电类型的第三半导体区域; 由所述第二半导体区域和所述第三半导体区域形成的光电检测器部分; 由在所述第一半导体区域和所述第二半导体区域以外的选择性地形成的沟槽形成的微反射镜，所述第二半导体区域除了所述光电检测器部分; 以及保持在沟槽的底面上的半导体激光元件。 在光电检测器部分中，在第一半导体区域和第二半导体区域之间选择性地形成杂质浓度高于第一半导体区域和第二半导体区域的第一导电型掩埋层。

公开(公告)号：US20090261441A1

公开(公告)日：2009-10-22

申请号：US12400346

申请日：2009-03-09

申请人： Hisatada Yasukawa ,  Hironari Takehara ,  Takaki Iwai

发明人： Hisatada Yasukawa ,  Hironari Takehara ,  Takaki Iwai

IPC分类号： H01L31/02 ,  H01L31/112

CPC分类号： H01L31/103 ,  G11B7/13 ,  G11B2007/0006

摘要： An optical semiconductor device includes a light-receiving element on a semiconductor substrate of a first conductivity type, the light-receiving element including a light-receiving portion for converting incident light to an electrical current signal and performing a current amplification. The light-receiving portion includes: a semiconductor layer formed on the semiconductor substrate and having an impurity concentration substantially equal to or less than that of the semiconductor substrate; a first semiconductor region of a second conductivity type formed on the semiconductor layer and having an impurity concentration higher than that of the semiconductor layer; and a second semiconductor region of the first conductivity type selectively formed between the semiconductor substrate and the semiconductor layer and having an impurity concentration higher than those of the semiconductor substrate and the semiconductor layer.

摘要翻译： 光学半导体器件包括在第一导电类型的半导体衬底上的光接收元件，该光接收元件包括用于将入射光转换成电流信号并执行电流放大的光接收部分。 光接收部分包括：形成在半导体衬底上并具有基本上等于或小于半导体衬底的杂质浓度的杂质浓度的半导体层; 在所述半导体层上形成的杂质浓度高于所述半导体层的杂质浓度的第二导电类型的第一半导体区域; 以及第一导电类型的第二半导体区域，其选择性地形成在半导体衬底和半导体层之间，并且具有比半导体衬底和半导体层的杂质浓度更高的杂质浓度。

公开(公告)号：US07483467B2

公开(公告)日：2009-01-27

申请号：US11518173

申请日：2006-09-11

申请人： Naoki Kohara ,  Hironari Takehara ,  Takaki Iwai ,  Hisatada Yasukawa

发明人： Naoki Kohara ,  Hironari Takehara ,  Takaki Iwai ,  Hisatada Yasukawa

IPC分类号： H01S5/00

CPC分类号： H01S5/40 ,  H01S5/026 ,  H01S5/4087

摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.

摘要翻译： 半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。 反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是 设置在多个区域的每一个区域中。

公开(公告)号：US20080194052A1

公开(公告)日：2008-08-14

申请号：US12078831

申请日：2008-04-07

申请人： Takaki Iwai

发明人： Takaki Iwai

IPC分类号： H01L33/00

CPC分类号： H01L31/153 ,  H01L2224/32145 ,  H01L2924/10157 ,  H01S5/02248 ,  H01S5/02292

摘要： An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.

摘要翻译： 光学半导体器件包括：第一导电类型的第一半导体区域; 形成在第一半导体区域上的第一导电型第二半导体区域; 形成在第二半导体区域上的第二导电类型的第三半导体区域; 由所述第二半导体区域和所述第三半导体区域形成的光电检测器部分; 由在所述第一半导体区域和所述第二半导体区域以外的选择性地形成的沟槽形成的微反射镜，所述第二半导体区域除了所述光电检测器部分; 以及保持在沟槽的底面上的半导体激光元件。 在光电检测器部分中，在第一半导体区域和第二半导体区域之间选择性地形成杂质浓度高于第一半导体区域和第二半导体区域的第一导电型掩埋层。

公开(公告)号：US20050129079A1

公开(公告)日：2005-06-16

申请号：US11009054

申请日：2004-12-13

申请人： Takaki Iwai

发明人： Takaki Iwai

IPC分类号： H01L31/153 ,  H01S5/022 ,  H01S5/026 ,  H01S5/042 ,  H01S5/00

CPC分类号： H01L31/153 ,  H01L2224/32145 ,  H01L2924/10157 ,  H01S5/02248 ,  H01S5/02292

摘要： An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.

摘要翻译： 光学半导体器件包括：第一导电类型的第一半导体区域; 形成在第一半导体区域上的第一导电型第二半导体区域; 形成在第二半导体区域上的第二导电类型的第三半导体区域; 由所述第二半导体区域和所述第三半导体区域形成的光电检测器部分; 由在所述第一半导体区域和所述第二半导体区域以外的选择性地形成的沟槽形成的微反射镜，所述第二半导体区域除了所述光电检测器部分; 以及保持在沟槽的底面上的半导体激光元件。 在光电检测器部分中，在第一半导体区域和第二半导体区域之间选择性地形成杂质浓度高于第一半导体区域和第二半导体区域的第一导电型掩埋层。

公开(公告)号：US20090230498A1

公开(公告)日：2009-09-17

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/103

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US20090140367A1

公开(公告)日：2009-06-04

申请号：US12302143

申请日：2007-04-03

申请人： Takaki Iwai

发明人： Takaki Iwai

IPC分类号： H01L31/0352

CPC分类号： H01L27/1443 ,  H01L27/0664 ,  H01L27/14683 ,  H01L31/10

摘要： An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concentration n-type cathode contact layer (9); a photodiode (2) made of the anode layer (27) and the cathode contact layer (9); and an NPN transistor (3) formed on the n-type epitaxial layer (26). The anode can be substantially completely depleted in the case where the anode layer (27) has its dopant concentration peak in the vicinity of the interface between the silicon substrate (1) and the n-type epitaxial layer (26). Therefore, high speed and high light receiving sensitivity characteristics can be obtained, and further, any influence of auto-doping from peripheral embedding layers can be controlled, so that a depletion layer can be stably formed in the anode. Thus, a photodiode characterized in its high speed and high light receiving sensitivity for short wavelength light and a transistor characterized in its high speed can be mounted on the same semiconductor substrate.

摘要翻译： 光学半导体器件设置有低浓度p型硅衬底（1）; 低掺杂浓度的n型外延层（第二外延层）（26）; 低掺杂浓度的p型阳极层（27）; 高浓度n型阴极接触层（9）; 由阳极层（27）和阴极接触层（9）制成的光电二极管（2）; 和形成在n型外延层（26）上的NPN晶体管（3）。 在阳极层（27）在硅衬底（1）和n型外延层（26）之间的界面附近具有其掺杂浓度峰值的情况下，阳极可以基本上完​​全耗尽。 因此，可以获得高速度和高的光接收灵敏度特性，并且可以控制来自周边嵌入层的自动掺杂的任何影响，从而可以在阳极中稳定地形成耗尽层。 因此，其特征在于对于短波长光具有高速度和高的光接收灵敏度的光电二极管和以其高速度表征的晶体管可以安装在同一半导体衬底上。

公开(公告)号：US20090032896A1

公开(公告)日：2009-02-05

申请号：US12173429

申请日：2008-07-15

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

IPC分类号： H01L31/11

CPC分类号： H01L31/1105 ,  G11B7/13

摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.

摘要翻译： 光学半导体器件包括用于接收入射光的光电晶体管。 光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。 发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

公开(公告)号：US08030728B2

公开(公告)日：2011-10-04

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/00

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。