Invention Grant
US07605446B2 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
失效
具有第一和第二绝缘门控的双极高压/功率半导体器件和操作方法
- Patent Title: Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
- Patent Title (中): 具有第一和第二绝缘门控的双极高压/功率半导体器件和操作方法
-
Application No.: US11486377Application Date: 2006-07-14
-
Publication No.: US07605446B2Publication Date: 2009-10-20
- Inventor: Florin Udrea , Nishad Udugampola , Gehan A. J. Amaratunga
- Applicant: Florin Udrea , Nishad Udugampola , Gehan A. J. Amaratunga
- Applicant Address: GB Cambridge
- Assignee: Cambridge Semiconductor Limited
- Current Assignee: Cambridge Semiconductor Limited
- Current Assignee Address: GB Cambridge
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L23/58
Abstract:
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are also provided. One or more drive circuits provide appropriate voltages to the first and second insulated gate terminals so as to allow current conduction in a first direction or in a second direction that is opposite the first direction.
Public/Granted literature
- US20080012043A1 Semiconductor device and method of operating a semiconductor device Public/Granted day:2008-01-17
Information query
IPC分类:
