Invention Grant
US07606061B2 SRAM device with a power saving module controlled by word line signals
有权
具有由字线信号控制的省电模块的SRAM器件
- Patent Title: SRAM device with a power saving module controlled by word line signals
- Patent Title (中): 具有由字线信号控制的省电模块的SRAM器件
-
Application No.: US11835372Application Date: 2007-08-07
-
Publication No.: US07606061B2Publication Date: 2009-10-20
- Inventor: Subramani Kengeri , Jhon-Jhy Liaw
- Applicant: Subramani Kengeri , Jhon-Jhy Liaw
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/06 ; G11C7/10 ; G11C5/14
Abstract:
An SRAM device include: a latch unit for retaining data; one or more pass gate transistors controlled by a word line for coupling the latch unit to a bit line and a complementary bit line; and a power saving module coupled to the latch unit for raising a source voltage of the latch unit in response to a control signal on the word line, thereby reducing a leakage current for the latch unit.
Public/Granted literature
- US20090040858A1 SRAM Device with a Power Saving Module Controlled by Word Line Signals Public/Granted day:2009-02-12
Information query
