发明授权
- 专利标题: Crystallization apparatus and crystallization method
- 专利标题(中): 结晶装置和结晶方法
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申请号: US11520751申请日: 2006-09-14
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公开(公告)号: US07608148B2公开(公告)日: 2009-10-27
- 发明人: Masakiyo Matsumura , Yukio Taniguchi
- 申请人: Masakiyo Matsumura , Yukio Taniguchi
- 申请人地址: JP Yokohama
- 专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人地址: JP Yokohama
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2002-351955 20021204; JP2002-357254 20021209
- 主分类号: C30B1/02
- IPC分类号: C30B1/02
摘要:
A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
公开/授权文献
- US20070006796A1 Crystallization apparatus and crystallization method 公开/授权日:2007-01-11
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