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公开(公告)号：US08435346B2
公开(公告)日：2013-05-07
申请号：US12366324
申请日：2009-02-05
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.
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2.发明授权Crystallization apparatus, crystallization method, device and phase modulation element 失效结晶装置，结晶方法，装置和相位调制元件公开(公告)号：US07803520B2
公开(公告)日：2010-09-28
申请号：US11681030
申请日：2007-03-01
CPC分类号： H01L21/0268 , B23K26/073 , C30B13/24 , G02B27/0927 , G02B27/0961 , H01L21/02595 , H01L21/2026 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.
摘要翻译： 本发明包括光调制光学系统，其具有形成对入射光束的期望光强度梯度分布的第一元件和形成具有相反峰值形状的期望光强度最小分布的第二元件，以及图像 形成光学系统，其设置在光调制光学系统和具有多晶半导体膜或非晶半导体膜的基板之间，其中形成有光强度梯度分布和光强度最小分布的入射光束被施加到 多晶半导体膜或通过图像形成光学系统的非晶半导体膜，从而使非晶半导体膜结晶。 第一元件的图案与第二元件的图案相反。
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公开(公告)号：US20090181483A1
公开(公告)日：2009-07-16
申请号：US12403776
申请日：2009-03-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： H01L21/336 , H01L21/26 , H01L21/78
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
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4.发明授权Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus 失效结晶装置，结晶方法，相位调制元件，装置和显示装置公开(公告)号：US07540921B2
公开(公告)日：2009-06-02
申请号：US10790828
申请日：2004-03-03
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.
摘要翻译： 根据本发明的相位调制元件具有基于具有预定尺寸的相位调制单元具有第一相位值的第一区域和具有基于具有预定尺寸的相位调制单元的具有第二相位值的第二区域，并且每个 相位分布由第一区域和第二区域的面积份额的变化取决于每个位置来定义。
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5.发明申请公开(公告)号：US20070211327A1
公开(公告)日：2007-09-13
申请号：US11749488
申请日：2007-05-16
IPC分类号： G02F1/01
CPC分类号： G03B27/72
摘要： A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane. The first to fourth light intensity distributions are different from each other on the predetermined plane.
摘要翻译： 一种光应用装置，包括具有多个相位步进的光调制元件，入射到光调制元件中的光束被相位步进相位调制并从光调制元件出射，作为具有第一 光强分布。 光学系统布置在光调制元件和预定平面之间。 光学系统将相位调制光束分成具有第二和第三光强分布和不同光学特性的至少两个光束，并且投影包括分割的两个光束的光束，投影的光强度分布 光束彼此组合，使得投影光束在预定平面上具有反向峰值形状的第四光强分布并进入预定平面。 第一至第四光强分布在预定平面上彼此不同。
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公开(公告)号：US20070006796A1
公开(公告)日：2007-01-11
申请号：US11520751
申请日：2006-09-14
CPC分类号： C30B1/02 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
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公开(公告)号：US20060138351A1
公开(公告)日：2006-06-29
申请号：US11299789
申请日：2005-12-13
CPC分类号： B23K26/066 , B23K26/0006 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/0838 , B23K26/354 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/56 , C30B13/24 , C30B29/06 , C30B35/00
摘要： A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.
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公开(公告)号：US20060043258A1
公开(公告)日：2006-03-02
申请号：US11178562
申请日：2005-07-12
申请人： Masayuki Jyumonji , Masakiyo Matsumura , Yukio Taniguchi , Masato Hiramatsu , Hiroyuki Ogawa , Noritaka Akita
发明人： Masayuki Jyumonji , Masakiyo Matsumura , Yukio Taniguchi , Masato Hiramatsu , Hiroyuki Ogawa , Noritaka Akita
IPC分类号： G02B7/04
CPC分类号： G02B27/40 , B23K26/705 , G01J1/04 , G01J1/0411 , G01J1/0448 , G01J1/4257 , G02B7/36
摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.
摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。
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9.发明申请Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film 审中-公开包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置公开(公告)号：US20060027809A1
公开(公告)日：2006-02-09
申请号：US11194607
申请日：2005-08-02
申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L29/76 , H01L23/544 , H01L29/04
CPC分类号： H01L21/02678 , H01L21/2026 , H01L21/268 , H01L23/544 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L29/78675 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.
摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。
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10.发明申请公开(公告)号：US20060027162A1
公开(公告)日：2006-02-09
申请号：US11098647
申请日：2005-04-05
申请人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
发明人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
CPC分类号： C30B1/00 , C30B13/24 , Y10T117/1004
摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
摘要翻译： 本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域 并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。 相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在 第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。
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