发明授权
- 专利标题: Producing SOI structure using high-purity ion shower
- 专利标题(中): 使用高纯度离子淋浴制造SOI结构
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申请号: US11444741申请日: 2006-05-31
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公开(公告)号: US07608521B2公开(公告)日: 2009-10-27
- 发明人: Jeffrey Scott Cites , Kishor Purushottam Gadkaree , Richard Orr Maschmeyer
- 申请人: Jeffrey Scott Cites , Kishor Purushottam Gadkaree , Richard Orr Maschmeyer
- 申请人地址: US NY Corning
- 专利权人: Corning Incorporated
- 当前专利权人: Corning Incorporated
- 当前专利权人地址: US NY Corning
- 代理商 Timothy M. Schaeberl; Bruce P. Watson; Matthew B. Dernier
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/46
摘要:
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
公开/授权文献
- US20070281399A1 Producing SOI structure using high-purity ion shower 公开/授权日:2007-12-06