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    Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
    6.
    发明授权
    Glass-ceramic-based semiconductor-on-insulator structures and method for making the same 有权
    玻璃陶瓷绝缘体上半导体结构及其制造方法

    公开(公告)号：US09257328B2

    公开(公告)日：2016-02-09

    申请号：US12324576

    申请日：2008-11-26

    申请人： Christopher Paul Daigler ,  Kishor Purushottam Gadkaree ,  Joseph Frank Mach ,  Steven Alvin Tietje

    发明人： Christopher Paul Daigler ,  Kishor Purushottam Gadkaree ,  Joseph Frank Mach ,  Steven Alvin Tietje

    IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L29/786

    CPC分类号： H01L21/76254 ,  H01L29/78603

    摘要： Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.

    摘要翻译： 用于在玻璃 - 陶瓷结构上形成半导体的方法和装置提供：使施主半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到前体玻璃基板上; 将剥离层与施主半导体晶片分离，从而在前体玻璃结构上形成中间半导体; 将中间半导体夹在第一和第二支撑结构之间的前体玻璃结构上; 向第一和第二支撑结构中的一个或两个施加压力; 并且将前体玻璃结构上的中间半导体进行热处理步骤以使前体玻璃结晶，从而在玻璃 - 陶瓷结构上形成半导体。

    CARBON ACTIVATION IN A MICROWAVE FLUIDIZED BED PROCESS
    8.
    发明申请
    CARBON ACTIVATION IN A MICROWAVE FLUIDIZED BED PROCESS 有权
    微波流化床过程中的碳活化

    公开(公告)号：US20140056799A1

    公开(公告)日：2014-02-27

    申请号：US13590682

    申请日：2012-08-21

    申请人： Kishor Purushottam Gadkaree ,  Andrew Fleitz Husted ,  Naveen Kekre ,  Jia Liu

    发明人： Kishor Purushottam Gadkaree ,  Andrew Fleitz Husted ,  Naveen Kekre ,  Jia Liu

    IPC分类号： C01B31/10

    CPC分类号： C01B31/10 ,  C01B32/336 ,  C01B32/366

    摘要： A method for forming activated carbon from carbon feedstock involves forming particles of the carbon feedstock, introducing the carbon feedstock particles into a microwave reaction chamber and forming a fluidized bed of the particles within the chamber, introducing steam into the reaction chamber, and introducing microwaves into the reaction chamber to heat the particles using microwave energy and react the heated particles with the steam to form activated carbon.

    摘要翻译： 从碳原料形成活性炭的方法包括形成碳原料的颗粒，将碳原料颗粒引入微波反应室，并在室内形成颗粒的流化床，将蒸汽引入反应室，并将微波引入 反应室用微波能加热颗粒，并使加热的颗粒与蒸汽反应形成活性炭。

    Electrolyte synthesis for ultracapacitors
    9.
    发明授权
    Electrolyte synthesis for ultracapacitors 有权
    超级电容器的电解质合成

    公开(公告)号：US08636916B2

    公开(公告)日：2014-01-28

    申请号：US13220865

    申请日：2011-08-30

    申请人： Kishor Purushottam Gadkaree ,  Satyanarayana Kodali

    发明人： Kishor Purushottam Gadkaree ,  Satyanarayana Kodali

    IPC分类号： H01G9/035

    CPC分类号： H01G11/60 ,  H01G9/035 ,  H01G11/62 ,  H01M10/0568 ,  H01M2300/0025 ,  Y02E60/13 ,  Y02T10/7022

    摘要： A method of forming an electrolyte solution involves combining ammonium tetrafluoroborate and a quaternary ammonium halide in a liquid solvent to form a quaternary ammonium tetrafluoroborate and an ammonium halide. The ammonium halide precipitate is removed from the solvent to form an electrolyte solution. The reactants can be added step-wise to the solvent, and the method can include using a stoichiometric excess of the ammonium tetrafluoroborate to form a substantially halide ion-free electrolyte solution. Filtration can be done at low temperatures to reduce the amount of excess bromide in the resulting electrolyte.

    摘要翻译： 形成电解质溶液的方法包括在液体溶剂中组合四氟硼酸铵和季铵卤化物以形成四氟硼酸季铵盐和卤化铵。 从溶剂中除去卤化铵沉淀物以形成电解质溶液。 反应物可以逐步添加到溶剂中，并且该方法可以包括使用化学计量过量的四氟硼酸铵来形成基本上无卤离子的电解质溶液。 可以在低温下进行过滤以减少所得电解质中过量溴化物的量。

    Substrate compositions and methods for forming semiconductor on insulator devices
    10.
    发明授权
    Substrate compositions and methods for forming semiconductor on insulator devices 有权
    用于形成半导体绝缘体器件的衬底组合物和方法

    公开(公告)号：US08530998B2

    公开(公告)日：2013-09-10

    申请号：US12682842

    申请日：2008-10-28

    申请人： Kishor Purushottam Gadkaree ,  Matthew John Dejneka ,  Adam James Ellison

    发明人： Kishor Purushottam Gadkaree ,  Matthew John Dejneka ,  Adam James Ellison

    IPC分类号： H01L29/02

    CPC分类号： H01L21/187

    摘要： Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.

    摘要翻译： 用于制造绝缘体上半导体结构的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上，其中玻璃基板的液相线粘度为约100,000泊或更大。