Invention Grant
- Patent Title: Method of growing nitride semiconductor material
- Patent Title (中): 生长氮化物半导体材料的方法
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Application No.: US12014200Application Date: 2008-01-15
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Publication No.: US07608532B2Publication Date: 2009-10-27
- Inventor: Hung-Cheng Lin , Jen-Inn Chyi
- Applicant: Hung-Cheng Lin , Jen-Inn Chyi
- Applicant Address: TW Taoyuan
- Assignee: National Central University
- Current Assignee: National Central University
- Current Assignee Address: TW Taoyuan
- Agent Chun-Ming Shih
- Priority: TW96148945A 20071220
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3205

Abstract:
A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.
Public/Granted literature
- US20090162999A1 Method of Growing Nitride Semiconductor material Public/Granted day:2009-06-25
Information query
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