A method for fabricating a semiconductor device, includes forming an opening in a first film, embedding an alignment mark material for alignment with an upper layer in the opening, forming a second film on the first film in which the alignment mark material is embedded, irradiating the second film formed in a predetermined region including a position where the alignment mark material is embedded with a processing light, thereby to remove the second film to an extent that a portion of the second film remains in the predetermined region, and exposing the portion of the second film remaining in the predetermined region to an etching environment for etching the second film.