发明授权
- 专利标题： Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method
- 专利标题（中）： 基板检查装置，基板检查方法及半导体装置的制造方法
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申请号： US11698132申请日： 2007-01-26
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公开(公告)号： US07608821B2公开(公告)日： 2009-10-27
- 发明人: Ichirota Nagahama , Yuichiro Yamazaki , Atsushi Onishi
- 申请人： Ichirota Nagahama , Yuichiro Yamazaki , Atsushi Onishi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2006-035297 20060213
- 主分类号： H01J37/26
- IPC分类号： H01J37/26 ; G01N23/04
摘要：
A substrate inspection apparatus includes: an electron gun which generates an electron beam to irradiate the electron beam to a substrate; an electron detection unit which detects at least one of a secondary electron, a reflection electron and a back scattering electron generated from a surface of the substrate by the irradiation of the electron beam to output signals constituting an image showing a state of the substrate surface; and a surface potential uniformizing unit which generates ions, and irradiates the ions to the substrate before the irradiation of the electron beam to uniformize a surface potential of the substrate.
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