Invention Grant
- Patent Title: Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same
- Patent Title (中): 使用硅纳米点的半导体发光二极管及其制造方法
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Application No.: US12278331Application Date: 2008-06-27
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Publication No.: US07608853B2Publication Date: 2009-10-27
- Inventor: Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
- Applicant: Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, PC
- Priority: KR10-2006-0016665 20060221
- International Application: PCT/KR2006/002480 WO 20080627
- International Announcement: WO2007/097500 WO 20070830
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/22 ; H01L33/00 ; H01L21/00 ; H01L21/26 ; H01L21/324 ; H01L21/42 ; H01L21/477
Abstract:
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
Public/Granted literature
- US20090032836A1 SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-02-05
Information query
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