发明授权
US07615482B2 Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
有权
多孔SiCOH介电层的结构和方法以及具有增加的界面和机械强度的粘合促进或蚀刻停止层
- 专利标题： Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
- 专利标题（中）： 多孔SiCOH介电层的结构和方法以及具有增加的界面和机械强度的粘合促进或蚀刻停止层
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申请号： US11690248申请日： 2007-03-23
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公开(公告)号： US07615482B2公开(公告)日： 2009-11-10
- 发明人: Daniel C. Edelstein , Alexandros Demos , Stephen M. Gates , Alfred Grill , Steven E. Molis , Vu Ngoc Tran Nguyen , Steven Reiter , Darryl D. Restaino , Kang Sub Yim
- 申请人： Daniel C. Edelstein , Alexandros Demos , Stephen M. Gates , Alfred Grill , Steven E. Molis , Vu Ngoc Tran Nguyen , Steven Reiter , Darryl D. Restaino , Kang Sub Yim
- 申请人地址： US NY Armonk US CA Santa Clara
- 专利权人： International Business Machines Corporation,Applied Materials, Inc.
- 当前专利权人： International Business Machines Corporation,Applied Materials, Inc.
- 当前专利权人地址： US NY Armonk US CA Santa Clara
- 代理商 Lisa U. Jaklitsch
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.
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