公开(公告)号：US20080233366A1

公开(公告)日：2008-09-25

申请号：US11690248

申请日：2007-03-23

Applicant: Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

Inventor： Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

IPC: B32B3/00 ,  B05D5/12

CPC classification number: C23C16/401 ,  C23C16/0272 ,  C23C16/029 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/24851 ,  Y10T428/249961

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract translation: 公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。 该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上 在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。 该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

公开(公告)号：US20100009161A1

公开(公告)日：2010-01-14

申请号：US12548487

申请日：2009-08-27

Applicant: Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

Inventor： Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

IPC: B32B5/14

CPC classification number: C23C16/401 ,  C23C16/0272 ,  C23C16/029 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/24851 ,  Y10T428/249961

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract translation: 公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。 该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上 在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。 该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

公开(公告)号：US20070042131A1

公开(公告)日：2007-02-22

申请号：US11208835

申请日：2005-08-22

Applicant: Jyr Hong Soo ,  Vu Ngoc Nguyen ,  Steven Reiter ,  Jason Foster ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： Jyr Hong Soo ,  Vu Ngoc Nguyen ,  Steven Reiter ,  Jason Foster ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: H05H1/24 ,  B05C11/00 ,  C23C16/00

CPC classification number: H01J37/32935

Abstract: Methods and systems of diagnosing an arcing problem in a semiconductor wafer processing chamber are described. The methods may include coupling a voltage probe to a process-gas distribution faceplate in the processing chamber, and activating an RF power source to generate a plasma between the faceplate and a substrate wafer. The methods may also include measuring the DC bias voltage of the faceplate as a function of time during the activation of the RF power source, where a spike in the measured voltage at the faceplate indicates an arcing event has occurred in the processing chamber. Methods and systems to reduce arcing in a semiconductor wafer processing chamber are also described.

Abstract translation: 描述了在半导体晶片处理室中诊断电弧问题的方法和系统。 所述方法可以包括将电压探针耦合到处理室中的处理气体分布面板，以及激活RF功率源以在面板和衬底晶片之间产生等离子体。 所述方法还可以包括在激活RF功率源期间测量面板的DC偏置电压作为时间的函数，其中面板中测量的电压的尖峰表示在处理室中发生了电弧事件。 还描述了用于减少半导体晶片处理室中的电弧的方法和系统。

公开(公告)号：US4506626A

公开(公告)日：1985-03-26

申请号：US423119

申请日：1982-09-24

Applicant: Richard H. Schurman ,  John W. Schurman ,  Richard W. Clark ,  Steven Reiter

Inventor： Richard H. Schurman ,  John W. Schurman ,  Richard W. Clark ,  Steven Reiter

IPC: A61B5/00 ,  B05B12/08 ,  G01N21/31 ,  G01N21/78 ,  G01N21/85 ,  G05D11/13 ,  B05B12/14

CPC classification number: G05D11/138 ,  A61B5/1455 ,  B05B12/082 ,  G01N21/78 ,  G01N21/314 ,  G01N21/85 ,  G01N2201/062 ,  G01N2201/1222

Abstract: This invention is directed to the use of two or more light waves having separate and distinct wave lengths. The light waves are directed to a fluid. The initial detected relative intensities of the light waves is known. After the light waves have left the fluid the final relative intensities can be determined. By knowing the relative shift in the initial intensities to the final intensities it is possible to determine a characteristic of the fluid. With this characteristic of the fluid it is possible to take appropriate action to change the characteristic of the fluid or it may be desirable to take no action with respect to the characteristic of the fluid.

Abstract translation: 本发明涉及使用具有分离和不同波长的两个或多个光波。 光波被引导到流体。 光波的初始检测相对强度是已知的。 在光波离开流体之后，可以确定最终的相对强度。 通过了解初始强度相对于最终强度的相对偏移，可以确定流体的特性。 利用流体的这种特性，可以采取适当的动作来改变流体的特性，或者可能不采取相对于流体特性的动作。

公开(公告)号：US07615482B2

公开(公告)日：2009-11-10

申请号：US11690248

申请日：2007-03-23

Applicant: Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

Inventor： Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

IPC: H01L21/4763

CPC classification number: C23C16/401 ,  C23C16/0272 ,  C23C16/029 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/24851 ,  Y10T428/249961

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract translation: 公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。 该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上 在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。 该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

公开(公告)号：US20080050932A1

公开(公告)日：2008-02-28

申请号：US11508545

申请日：2006-08-23

Applicant: Annamalai Lakshmanan ,  Vu NT Nguyen ,  Sohyun Park ,  Ganesh Balasubramanian ,  Steven Reiter ,  Tsutomu Kiyohara ,  Francimar Schmitt ,  Bok Hoen Kim

Inventor： Annamalai Lakshmanan ,  Vu NT Nguyen ,  Sohyun Park ,  Ganesh Balasubramanian ,  Steven Reiter ,  Tsutomu Kiyohara ,  Francimar Schmitt ,  Bok Hoen Kim

IPC: H01L21/473

CPC classification number: C23C16/4404 ,  C23C16/0245 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3148 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185

Abstract: The present invention generally provides an apparatus and method for reducing defects on films deposited on semiconductor substrates. One embodiment of the present invention provides a method for depositing a film on a substrate. The method comprises treating the substrate with a first plasma configured to reduce pre-existing defects on the substrate, and depositing a film comprising silicon and carbon on the substrate by applying a second plasma generated from at least one precursor and at least one reactant gas.

Abstract translation: 本发明通常提供一种用于减少沉积在半导体衬底上的薄膜上的缺陷的装置和方法。 本发明的一个实施方案提供了一种在基材上沉积膜的方法。 该方法包括用配置成减少衬底上预先存在的缺陷的第一等离子体处理衬底，以及通过施加由至少一种前体和至少一种反应气体产生的第二等离子体将包含硅和碳的膜沉积在衬底上。

公开(公告)号：US07259111B2

公开(公告)日：2007-08-21

申请号：US11142124

申请日：2005-06-01

Applicant: Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

Inventor： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC: H01L21/469

CPC classification number: H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

Abstract: A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

Abstract translation: 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20060160376A1

公开(公告)日：2006-07-20

申请号：US11142124

申请日：2005-06-01

Applicant: Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

Inventor： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC: H01L21/31

CPC classification number: H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

Abstract: A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

Abstract translation: 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。