Invention Grant
US07615840B2 Device performance improvement using flowfill as material for isolation structures
有权
使用流动填充作为隔离结构材料的设备性能改进
- Patent Title: Device performance improvement using flowfill as material for isolation structures
- Patent Title (中): 使用流动填充作为隔离结构材料的设备性能改进
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Application No.: US11766234Application Date: 2007-06-21
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Publication No.: US07615840B2Publication Date: 2009-11-10
- Inventor: Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
- Applicant: Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
Public/Granted literature
- US20080315267A1 Device Performance Improvement Using FlowFill as Material for Isolation Structures Public/Granted day:2008-12-25
Information query
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