发明授权
- 专利标题： Method for forming self-aligned metal silicide contacts
- 专利标题（中）： 用于形成自对准金属硅化物接触的方法
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申请号： US11415922申请日： 2006-05-01
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公开(公告)号： US07618891B2公开(公告)日： 2009-11-17
- 发明人: Sunfei Fang , Randolph F. Knarr , Mahadevaiyer Krishnan , Christian Lavoie , Renee T. Mo , Balasubramanian Pranatharthiharan , Jay W. Strane
- 申请人： Sunfei Fang , Randolph F. Knarr , Mahadevaiyer Krishnan , Christian Lavoie , Renee T. Mo , Balasubramanian Pranatharthiharan , Jay W. Strane
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.
公开/授权文献
- US20070254479A1 Method for forming self-aligned metal silicide contacts 公开/授权日：2007-11-01