发明授权
- 专利标题： Deep trench device with single sided connecting structure and fabrication method thereof
- 专利标题（中）： 具有单面连接结构的深沟槽器件及其制造方法
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申请号： US11940547申请日： 2007-11-15
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公开(公告)号： US07619271B2公开(公告)日： 2009-11-17
- 发明人: Shian-Jyh Lin , Chien-Li Cheng
- 申请人： Shian-Jyh Lin , Chien-Li Cheng
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 代理机构： Quintero Law Office
- 优先权： TW96125181A 20070711
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A deep trench device with a single sided connecting structure. The device comprises a substrate having a trench therein. A buried trench capacitor is disposed in a lower portion of the trench. An asymmetric collar insulator is disposed on an upper portion of the sidewall of the trench. A connecting structure is disposed in the upper portion of the trench, comprising an epitaxial silicon layer disposed on and adjacent to a relatively low portion of the asymmetric collar insulator and a connecting member disposed between the epitaxial silicon layer and a relatively high portion of the asymmetric collar insulator. A conductive layer is disposed between the relatively high and low portions of the asymmetric collar insulator, to electrically connect the buried trench capacitor and the connecting structure. A cap layer is disposed on the connecting structure. A fabrication method for a deep trench device is also disclosed.
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