发明授权
US07625603B2 Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics
有权
裂纹和无残留的保形沉积氧化硅具有可预测和均匀的蚀刻特性
- 专利标题： Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics
- 专利标题（中）： 裂纹和无残留的保形沉积氧化硅具有可预测和均匀的蚀刻特性
-
申请号： US10713172申请日： 2003-11-14
-
公开(公告)号： US07625603B2公开(公告)日： 2009-12-01
- 发明人: Aaron Partridge , Markus Lutz , Silvia Kronmueller
- 申请人： Aaron Partridge , Markus Lutz , Silvia Kronmueller
- 申请人地址： DE Stuttgart
- 专利权人： Robert Bosch GmbH
- 当前专利权人： Robert Bosch GmbH
- 当前专利权人地址： DE Stuttgart
- 代理机构： Kenyon & Kenyon LLP
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/30 ; B05D3/02 ; H01L21/00 ; H01L21/76 ; H01L21/30 ; H01L21/302 ; H01L21/469 ; C23F1/00 ; B44C1/22
摘要：
A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.
公开/授权文献
信息查询
IPC分类:
