Invention Grant
US07625802B2 Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
有权
具有改进的卤素结构的半导体器件和形成半导体器件的卤素结构的方法
- Patent Title: Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
- Patent Title (中): 具有改进的卤素结构的半导体器件和形成半导体器件的卤素结构的方法
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Application No.: US10400226Application Date: 2003-03-27
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Publication No.: US07625802B2Publication Date: 2009-12-01
- Inventor: Thomas Feudel , Manfred Horstmann , Rolf Stephan
- Applicant: Thomas Feudel , Manfred Horstmann , Rolf Stephan
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE10245608 20020930
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming the halo structures of a field effect transistor is disclosed. The halo structures are formed by implanting ions of a dopant material into the substrate on which the transistor is to be formed, wherein the tilt angle of the ion beam with respect to the surface of the substrate is varied according to a predefined time schedule comprising a plurality of implanting periods.
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Information query
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