发明授权
US07626228B2 NAND-type non-volatile memory devices having a stacked structure
失效
具有堆叠结构的NAND型非易失性存储器件
- 专利标题: NAND-type non-volatile memory devices having a stacked structure
- 专利标题(中): 具有堆叠结构的NAND型非易失性存储器件
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申请号: US11637686申请日: 2006-12-12
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公开(公告)号: US07626228B2公开(公告)日: 2009-12-01
- 发明人: Jae-Kwan Park , Ki-Nam Kim , Soon-Moon Jung
- 申请人: Jae-Kwan Park , Ki-Nam Kim , Soon-Moon Jung
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2005-0121779 20051212
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L23/48 ; H01L23/52
摘要:
A NAND-type nonvolatile memory device includes a semiconductor substrate and a first ground selection line and a first string selection line disposed on the substrate in parallel to each other. A plurality of parallel first word lines are interposed on the substrate between the first ground selection line and the first string selection line. A first impurity-doped region is formed in the semiconductor substrate adjacent to the first word lines, the first ground selection line, and the first string selection line. A first interlayer dielectric layer is disposed on the first ground selection line, the first string selection line, the plurality of first word lines, and the semiconductor substrate. An epitaxial contact plug contacts the semiconductor substrate through the first interlayer dielectric layer. A single crystalline semiconductor layer is disposed on the first interlayer dielectric layer that contacts the epitaxial contact plug. A plurality of parallel second word lines is disposed on the single crystalline semiconductor layer. A second impurity-doped region formed in the single crystalline semiconductor layer adjacent to the second word lines. A second interlayer dielectric layer is disposed on the plurality of second word lines and the single crystalline semiconductor layer.