Invention Grant
- Patent Title: Solid-state imaging device and camera system
- Patent Title (中): 固态成像装置和相机系统
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Application No.: US10571720Application Date: 2004-09-16
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Publication No.: US07626625B2Publication Date: 2009-12-01
- Inventor: Tetsuo Nomoto , Eiji Makino , Keiji Mabuchi , Tsutomu Haruta , Shinjiro Kameda
- Applicant: Tetsuo Nomoto , Eiji Makino , Keiji Mabuchi , Tsutomu Haruta , Shinjiro Kameda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2003-323408 20030916
- International Application: PCT/JP2004/013552 WO 20040916
- International Announcement: WO2005/027511 WO 20050324
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
Public/Granted literature
- US20070024726A1 Solid-state imaging device and camera system Public/Granted day:2007-02-01
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