公开(公告)号：US20120105698A1

公开(公告)日：2012-05-03

申请号：US13295361

申请日：2011-11-14

申请人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

发明人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

摘要： A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

摘要翻译： 一种具有单位像素的MOS型固态成像装置，每个像素具有光电二极管，用于将光电二极管的信号传输到浮动节点;放大器晶体管，用于将浮动节点的信号输出到垂直信号线;以及复位 用于复位浮动节点的晶体管。 复位晶体管的栅极电压由电源电位（例如3V），接地电位（0V）和负电源电位（例如-1V）的三个值控制。

公开(公告)号：US08558932B2

公开(公告)日：2013-10-15

申请号：US13295361

申请日：2011-11-14

申请人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

发明人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

摘要： A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

摘要翻译： 一种具有单位像素的MOS型固态成像装置，每个像素具有光电二极管，用于将光电二极管的信号传输到浮动节点;放大器晶体管，用于将浮动节点的信号输出到垂直信号线;以及复位 用于复位浮动节点的晶体管。 复位晶体管的栅极电压由电源电位（例如3V），接地电位（0V）和负电源电位（例如-1V）的三个值来控制。

公开(公告)号：US07626625B2

公开(公告)日：2009-12-01

申请号：US10571720

申请日：2004-09-16

申请人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

发明人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

摘要： A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

摘要翻译： 一种固态成像装置，其能够使来自非选择行的噪声小，能够抑制明亮场景中的垂直条纹的发生，不需要经由复位晶体管的包括浮动节点容量的充电，能够防止驱动器的大小增加 排水管线，并且能够确保高速操作，并且提供使用其作为成像装置的相机系统。 一种MOS型固态成像装置，其中具有光电二极管11的单位像素10，用于将光电二极管11的信号传送到浮动节点N11的转移晶体管12，用于将浮动节点N11的信号输出到 垂直信号线22和用于复位浮动节点N11的复位晶体管14被排列成矩阵，并且其中复位晶体管14的栅极电压由电源电位（例如3V）的三个值控制， 接地电位（0V）和负电源电位（例如-1V）。

公开(公告)号：US08072528B2

公开(公告)日：2011-12-06

申请号：US12627425

申请日：2009-11-30

申请人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

发明人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

摘要： A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

摘要翻译： 一种固态成像装置，其能够使来自非选择行的噪声小，能够抑制明亮场景中的垂直条纹的发生，不需要经由复位晶体管的包括浮动节点容量的充电，能够防止驱动器的大小增加 排水管线，并且能够确保高速操作，并且提供使用其作为成像装置的相机系统。 一种MOS型固态成像装置，其中具有光电二极管11的单位像素10，用于将光电二极管11的信号传送到浮动节点N11的转移晶体管12，用于将浮动节点N11的信号输出到 垂直信号线22和用于复位浮动节点N11的复位晶体管14被排列成矩阵，并且其中复位晶体管14的栅极电压由电源电位（例如3V）的三个值控制， 接地电位（0V）和负电源电位（例如-1V）。

公开(公告)号：US20100073536A1

公开(公告)日：2010-03-25

申请号：US12627425

申请日：2009-11-30

申请人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

发明人： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC分类号： H04N5/335 ,  H04N3/14

CPC分类号： H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

摘要： A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

摘要翻译： 一种固态成像装置，其能够使来自非选择行的噪声小，能够抑制明亮场景中的垂直条纹的发生，不需要经由复位晶体管的包括浮动节点容量的充电，能够防止驱动器的大小增加 排水管线，并且能够确保高速操作，并且提供使用其作为成像装置的相机系统。 一种MOS型固态成像装置，其中具有光电二极管11的单位像素10，用于将光电二极管11的信号传送到浮动节点N11的转移晶体管12，用于将浮动节点N11的信号输出到 垂直信号线22和用于复位浮动节点N11的复位晶体管14被排列成矩阵，并且其中复位晶体管14的栅极电压由电源电位（例如3V）的三个值控制， 接地电位（0V）和负电源电位（例如-1V）。

公开(公告)号：US20080197268A1

公开(公告)日：2008-08-21

申请号：US12012679

申请日：2008-02-05

申请人： Shinjiro Kameda

发明人： Shinjiro Kameda

IPC分类号： H01L27/00

CPC分类号： H01L27/14623 ,  H04N5/361 ,  H04N5/3745

摘要： There is provided a solid-state imaging device including: a plurality of aperture pixels configured to be used for capturing of an image; a plurality of first light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the first light-shielded pixels being larger than a temperature dependence of a dark current in the aperture pixels; and a plurality of second light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the second light-shielded pixels being smaller than a temperature dependence of a dark current in the aperture pixels.

摘要翻译： 提供了一种固态成像装置，包括：多个孔径像素，被配置为用于捕获图像; 多个第一遮光像素，被配置为屏蔽光以检测光学黑色电平，第一遮光像素中的暗电流的温度依赖性大于孔径像素中的暗电流的温度依赖性 ; 以及多个第二遮光像素，被配置为屏蔽光以检测光学黑色电平，所述第二遮光像素中的暗电流的温度依赖性小于所述光圈中的暗电流的温度依赖性 像素。

公开(公告)号：US08227734B2

公开(公告)日：2012-07-24

申请号：US12012679

申请日：2008-02-05

申请人： Shinjiro Kameda

发明人： Shinjiro Kameda

IPC分类号： H01L27/00 ,  H01J40/14

CPC分类号： H01L27/14623 ,  H04N5/361 ,  H04N5/3745

摘要： There is provided a solid-state imaging device including: a plurality of aperture pixels configured to be used for capturing of an image; a plurality of first light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the first light-shielded pixels being larger than a temperature dependence of a dark current in the aperture pixels; and a plurality of second light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the second light-shielded pixels being smaller than a temperature dependence of a dark current in the aperture pixels.

摘要翻译： 提供了一种固态成像装置，包括：多个孔径像素，被配置为用于捕获图像; 多个第一遮光像素，被配置为屏蔽光以检测光学黑色电平，第一遮光像素中的暗电流的温度依赖性大于孔径像素中的暗电流的温度依赖性 ; 以及多个第二遮光像素，被配置为屏蔽光以检测光学黑色电平，所述第二遮光像素中的暗电流的温度依赖性小于所述光圈中的暗电流的温度依赖性 像素。

公开(公告)号：US20080029837A1

公开(公告)日：2008-02-07

申请号：US11825579

申请日：2007-07-06

申请人： Shinjiro Kameda ,  Eiichi Funatsu

发明人： Shinjiro Kameda ,  Eiichi Funatsu

IPC分类号： H01L31/00

CPC分类号： H01L27/14601 ,  H01L27/14603

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel.

摘要翻译： 提供固态成像装置。 该固态成像装置包括具有以二维阵列排列的多个像素的成像区域，其中成像区域包括有效像素和黑色参考像素; 并且有效像素中的浮动扩散部分的形状与黑色参考像素中的浮动扩散部分的形状不同。

公开(公告)号：US08519502B2

公开(公告)日：2013-08-27

申请号：US11825579

申请日：2007-07-06

申请人： Shinjiro Kameda ,  Eiichi Funatsu

发明人： Shinjiro Kameda ,  Eiichi Funatsu

IPC分类号： H01L31/115

CPC分类号： H01L27/14601 ,  H01L27/14603

摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel.

摘要翻译： 提供固态成像装置。 该固态成像装置包括具有以二维阵列排列的多个像素的成像区域，其中成像区域包括有效像素和黑色参考像素; 并且有效像素中的浮动扩散部分的形状与黑色参考像素中的浮动扩散部分的形状不同。