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US07629211B2 Field effect transistor and method of forming a field effect transistor 有权
场效应晶体管和形成场效应晶体管的方法

Field effect transistor and method of forming a field effect transistor
摘要：
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.
摘要（中）：

形成场效应晶体管的方法包括提供半导体衬底，栅电极形成在半导体衬底上。 在栅电极附近形成至少一个空腔。 应变产生元件形成在至少一个空腔中。 应变产生元件包括包含第一化学元素和第二化学元素的复合材料。 应变产生元件的第一部分中的第一化学元素的浓度与应变产生元件的第一部分中的第二化学元素的浓度之间的第一浓度比不同于第二浓度比， 的应变产生元件的第二部分中的第一化学元素和第二应变产生元件中的第二化学元素的浓度。

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