Invention Grant
US07629211B2 Field effect transistor and method of forming a field effect transistor
有权
场效应晶体管和形成场效应晶体管的方法
- Patent Title: Field effect transistor and method of forming a field effect transistor
- Patent Title (中): 场效应晶体管和形成场效应晶体管的方法
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Application No.: US11684211Application Date: 2007-03-09
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Publication No.: US07629211B2Publication Date: 2009-12-08
- Inventor: Sven Beyer , Thorsten Kammler , Rolf Stephan , Manfred Horstmann
- Applicant: Sven Beyer , Thorsten Kammler , Rolf Stephan , Manfred Horstmann
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102006035665 20060731
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8234
Abstract:
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.
Public/Granted literature
- US20080026531A1 FIELD EFFECT TRANSISTOR AND METHOD OF FORMING A FIELD EFFECT TRANSISTOR Public/Granted day:2008-01-31
Information query
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