Invention Grant
US07633042B2 Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes
失效
像素传感器单元具有围绕用于收集电子和空穴的收集阱区的钉扎层
- Patent Title: Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes
- Patent Title (中): 像素传感器单元具有围绕用于收集电子和空穴的收集阱区的钉扎层
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Application No.: US12172306Application Date: 2008-07-14
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Publication No.: US07633042B2Publication Date: 2009-12-15
- Inventor: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
- Applicant: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Anthony J. Canale
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
Public/Granted literature
- US20080296476A1 PIXEL SENSOR CELL FOR COLLECTING ELECTIONS AND HOLES Public/Granted day:2008-12-04
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