发明授权
- 专利标题: Method for manufacturing a sensor device
- 专利标题(中): 传感器装置的制造方法
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申请号: US12011063申请日: 2008-01-24
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公开(公告)号: US07645627B2公开(公告)日: 2010-01-12
- 发明人: John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack L. Glenn , Seyed R. Zarabadi
- 申请人: John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack L. Glenn , Seyed R. Zarabadi
- 申请人地址: US MI Troy
- 专利权人: Delphi Technologies, Inc.
- 当前专利权人: Delphi Technologies, Inc.
- 当前专利权人地址: US MI Troy
- 代理商 Jimmy L. Funke
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
公开/授权文献
- US20090191660A1 Method for manufacturing a sensor device 公开/授权日:2009-07-30
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