发明授权
- 专利标题： Method of fabricating heteroepitaxial microstructures
- 专利标题（中）： 制造异质外延微结构的方法
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申请号： US11852562申请日： 2007-09-10
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公开(公告)号： US07646038B2公开(公告)日： 2010-01-12
- 发明人: Bruce Faure , Fabrice Letertre , Bruno Ghyselen
- 申请人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
- 申请人地址： FR Bernin
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： FR Bernin
- 代理机构： Winston & Strawn LLP
- 优先权： FR0015279 20001127; EP03291284 20030527
- 主分类号： H01L31/072
- IPC分类号： H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336
摘要：
An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
公开/授权文献
- US20080210975A1 METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES 公开/授权日：2008-09-04