发明授权
- 专利标题: Process for producing silicon wafer
- 专利标题(中): 硅晶片生产工艺
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申请号: US11504969申请日: 2006-08-15
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公开(公告)号: US07648890B2公开(公告)日: 2010-01-19
- 发明人: Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 申请人: Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 申请人地址: JP Tokyo
- 专利权人: Sumco Corporation
- 当前专利权人: Sumco Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Kolisch Hartwell, P.C.
- 优先权: JPP2005-236255 20050817
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/46
摘要:
A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.
公开/授权文献
- US20070042567A1 Process for producing silicon wafer 公开/授权日:2007-02-22