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US07652935B2 Semiconductor memory device capable of achieving narrower distribution width of threshold voltages of memory cells and method of data write in the same 有权
半导体存储器件能够实现较小的存储单元阈值电压分布宽度和数据写入方法

Semiconductor memory device capable of achieving narrower distribution width of threshold voltages of memory cells and method of data write in the same
摘要：
When a data write sequence is started, initially, write data is latched in a data latch circuit corresponding to one memory mat. Then, a program pulse is applied to the memory mat, and data read from a memory cell, which is a data write target bit in the memory mat, is performed. Thereafter, verify determination of the memory mat is performed. After a verify operation for the memory mat is completed, a program pulse is applied to another memory mat, and a verify operation for another memory mat is performed.
摘要（中）：

当数据写入序列开始时，最初写入数据被锁存在对应于一个存储器垫的数据锁存电路中。 然后，将程序脉冲施加到存储器垫，并且执行从作为存储器垫中的数据写入目标位的存储单元读取的数据。 此后，验证是否执行存储垫的确定。 在存储器垫的验证操作完成之后，将程序脉冲施加到另一个存储器垫，并且执行另一存储器垫的验证操作。

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