发明授权
- 专利标题： Method of forming silicon-containing insulation film having low dielectric constant and low film stress
- 专利标题（中）： 形成具有低介电常数和低膜应力的含硅绝缘膜的方法
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申请号： US11550930申请日： 2006-10-19
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公开(公告)号： US07655577B2公开(公告)日： 2010-02-02
- 发明人: Yasuyoshi Hyodo , Nobuo Matsuki , Masashi Yamaguchi , Atsuki Fukazawa , Naoki Ohara , Yijun Liu
- 申请人： Yasuyoshi Hyodo , Nobuo Matsuki , Masashi Yamaguchi , Atsuki Fukazawa , Naoki Ohara , Yijun Liu
- 申请人地址： JP Tokyo
- 专利权人： ASM Japan K.K.
- 当前专利权人： ASM Japan K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
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