公开(公告)号：US07655577B2

公开(公告)日：2010-02-02

申请号：US11550930

申请日：2006-10-19

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过等离子体聚合在基板上形成含硅绝缘膜的方法包括：引入反应气体，该反应气体包含（i）包含含有至少一个乙烯基（Si-乙烯基化合物）的含硅烃环状化合物的源气体， 和（ii）添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US07148154B2

公开(公告)日：2006-12-12

申请号：US10644195

申请日：2003-08-20

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过引入包含（i）包含含有至少一个乙烯基的含硅烃化合物的源气体（Si-乙烯基化合物））的反应气体，通过等离子体聚合在基板上形成含硅绝缘膜，和（ii） 添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US20050042884A1

公开(公告)日：2005-02-24

申请号：US10644195

申请日：2003-08-20

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/312 ,  H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过引入包含（i）包含含有至少一个乙烯基的含硅烃化合物的源气体（Si-乙烯基化合物））的反应气体，通过等离子体聚合在基板上形成含硅绝缘膜，和（ii） 添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US06881683B2

公开(公告)日：2005-04-19

申请号：US10317239

申请日：2002-12-11

申请人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

发明人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC分类号： B05D7/24 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L23/29 ,  H01L21/469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US06852650B2

公开(公告)日：2005-02-08

申请号：US10288641

申请日：2002-11-05

申请人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： B05D7/24 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L23/29 ,  H01L21/31

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US07064088B2

公开(公告)日：2006-06-20

申请号：US10412363

申请日：2003-04-11

申请人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

发明人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US20070065597A1

公开(公告)日：2007-03-22

申请号：US11227525

申请日：2005-09-15

申请人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

发明人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/042 ,  H01J37/32623

摘要： A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a side surface portion of the wafer. The side mask portion has an inner diameter of Dw+α, and the top mask portion is disposed at a clearance of Tw+β between a bottom surface of the top mask portion and a wafer-supporting surface of the top plate, wherein α is more than zero, and β is more than zero.

摘要翻译： 在具有直径Dw和厚度Tw的晶片上形成薄膜的等离子体CVD装置包括：真空室; 淋浴板 顶板 用于覆盖晶片的顶表面周边部分的顶部掩模部分; 以及用于覆盖晶片的侧表面部分的侧面掩模部分。 侧面罩部分具有Dw +α的内径，并且顶部掩模部分设置在顶部掩模部分的底表面和顶板的晶片支承表面之间的Tw +β间隙处，其中α是 超过零，beta超过零。

公开(公告)号：US20070224833A1

公开(公告)日：2007-09-27

申请号：US11387527

申请日：2006-03-23

申请人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

发明人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

公开(公告)号：US07410915B2

公开(公告)日：2008-08-12

申请号：US11387527

申请日：2006-03-23

申请人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

发明人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

公开(公告)号：USD689867S1

公开(公告)日：2013-09-17

申请号：US29412570

申请日：2012-02-06

申请人： Masashi Yamaguchi ,  Yoshitomo Oota ,  Hiroshi Ito ,  Minoru Sashida ,  Kazuaki Sakuta ,  Yasushi Fujii

设计人： Masashi Yamaguchi ,  Yoshitomo Oota ,  Hiroshi Ito ,  Minoru Sashida ,  Kazuaki Sakuta ,  Yasushi Fujii