发明授权
- 专利标题： Method and apparatus for evaluating semiconductor layers
- 专利标题（中）： 用于评估半导体层的方法和装置
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申请号： US11486271申请日： 2006-07-14
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公开(公告)号： US07656514B2公开(公告)日： 2010-02-02
- 发明人: Hideo Takeuchi , Yoshitsugu Yamamoto
- 申请人： Hideo Takeuchi , Yoshitsugu Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2005-218329 20050728
- 主分类号： G01N21/00
- IPC分类号： G01N21/00
摘要：
A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
公开/授权文献
- US20070026594A1 Method and apparatus for evaluating semiconductor layers 公开/授权日：2007-02-01
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