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公开(公告)号：US07700972B2
公开(公告)日：2010-04-20
申请号：US12143053
申请日：2008-06-20
IPC分类号： H01L29/205 , H01L29/778
CPC分类号： H01L27/0733 , H01L28/40 , H01L29/778
摘要： A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening.
摘要翻译： 半导体器件包括依次形成在半导体衬底上的AlN层，GaN层和AlGaN层。 第一开口延伸穿过所述GaN层和所述AlGaN层并暴露AlN层的上表面的一部分。 第二开口延伸穿过半导体衬底并且在面向第一开口的位置中暴露AlN层的下表面的一部分。 上电极暴露在第一开口中的AlN层的上表面上; 并且下电极设置在第二开口中的AlN层的下表面上。
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2.发明授权公开(公告)号：US07038768B2
公开(公告)日：2006-05-02
申请号：US10642184
申请日：2003-08-18
CPC分类号： G01J3/4338 , G01J2001/4242 , G01N21/47 , G01N21/6489 , G01N2021/4735
摘要： In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.
摘要翻译： 在半导体多层结构的测量装置中，光谱仪从用于测量光致发光光谱的样品中分散光，或者分散探针光以照射样品用于测量反射光谱。 控制器使引导构件将白光引导到光谱仪，并从第一检测器获取用于测量反射光谱的电信号，并且使引导构件将来自光谱仪的光引导到第二检测器，以获取电信号 测量光致发光光谱。
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公开(公告)号：US07656514B2
公开(公告)日：2010-02-02
申请号：US11486271
申请日：2006-07-14
IPC分类号： G01N21/00
CPC分类号： G01N21/31
摘要： A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
摘要翻译： 半导体层的评价方法包括用光照射基板上的半导体层; 测量半导体层中激子特有的光谱; 并分析光谱的光谱特征的拓宽因子。 该方法以高精度快速测量半导体层的表面状态。
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公开(公告)号：US20090218578A1
公开(公告)日：2009-09-03
申请号：US12143053
申请日：2008-06-20
IPC分类号： H01L29/205
CPC分类号： H01L27/0733 , H01L28/40 , H01L29/778
摘要： A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening.
摘要翻译： 半导体器件包括依次形成在半导体衬底上的AlN层，GaN层和AlGaN层。 第一开口延伸穿过所述GaN层和所述AlGaN层并暴露AlN层的上表面的一部分。 第二开口延伸穿过半导体衬底并且在面向第一开口的位置中暴露AlN层的下表面的一部分。 上电极暴露在第一开口中的AlN层的上表面上; 并且下电极设置在第二开口中的AlN层的下表面上。
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5.发明授权Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level 有权用于测量表面载体复合速度和表面费米能级的方法和装置公开(公告)号：US07420684B2
公开(公告)日：2008-09-02
申请号：US11256180
申请日：2005-10-24
CPC分类号： G01N21/6489 , G01N21/1717 , G01N21/636
摘要： A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.
摘要翻译： 泵浦光束通过调制器照射半导体样品的表面，同时用探针束照射表面，使得检测器测量从半导体样品的表面反射的探测光束的光调制光谱。 然后，从出现在光调制光谱中的Franz-Keldysh振荡的周期计算表面电场强度，并且基于表面电场强度和探测光束功率之间的关系计算表面复合速度和表面费米能级 密度。
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6.发明申请Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level 有权用于测量表面载体复合速度和表面费米能级的方法和装置公开(公告)号：US20060094133A1
公开(公告)日：2006-05-04
申请号：US11256180
申请日：2005-10-24
IPC分类号： H01L21/66
CPC分类号： G01N21/6489 , G01N21/1717 , G01N21/636
摘要： A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.
摘要翻译： 泵浦光束通过调制器照射半导体样品的表面，同时用探针束照射表面，使得检测器测量从半导体样品的表面反射的探测光束的光调制光谱。 然后，从出现在光调制光谱中的Franz-Keldysh振荡的周期计算表面电场强度，并且基于表面电场强度和探测光束功率之间的关系计算表面复合速度和表面费米能级 密度。
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公开(公告)号：US06998615B2
公开(公告)日：2006-02-14
申请号：US10768163
申请日：2004-02-02
IPC分类号： G01R29/22
CPC分类号： G01N21/35
摘要： In a method of evaluating a piezoelectric field, non-destructive spectrometry of piezoelectric fields is performed in a semiconductor heterojunction using a technique different from PR spectroscopy. In the method, at first, first and second absorption spectra are measured by irradiating the sample with infrared light at first and second angles, respectively. Then, a peak position of an absorption band having incident-angle dependent intensity is specified, based on the first and second absorption spectra. Thus, the piezoelectric field strength is obtained using a relationship between the piezoelectric field and an electron energy level corresponding to the peak position.
摘要翻译： 在评估压电场的方法中，使用与PR光谱不同的技术在半导体异质结中进行压电场的非破坏性光谱测定。 在该方法中，首先，通过分别以第一和第二角度以红外光照射样品来测量第一和第二吸收光谱。 然后，基于第一吸收光谱和第二吸收光谱，确定具有入射角依赖强度的吸收带的峰值位置。 因此，使用压电场和对应于峰值位置的电子能级之间的关系获得压电场强。
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8.发明申请公开(公告)号：US20050099623A1
公开(公告)日：2005-05-12
申请号：US10642184
申请日：2003-08-18
IPC分类号： G01B11/06 , G01J1/42 , G01J3/433 , G01N21/00 , G01N21/27 , G01N21/47 , G01N21/64 , H01L21/66 , G01J3/30
CPC分类号： G01J3/4338 , G01J2001/4242 , G01N21/47 , G01N21/6489 , G01N2021/4735
摘要： In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.
摘要翻译： 在半导体多层结构的测量装置中，光谱仪从用于测量光致发光光谱的样品中分散光，或者分散探针光以照射样品用于测量反射光谱。 控制器使引导构件将白光引导到光谱仪，并从第一检测器获取用于测量反射光谱的电信号，并且使引导构件将来自光谱仪的光引导到第二检测器，以获取电信号 测量光致发光光谱。
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公开(公告)号：US20070026594A1
公开(公告)日：2007-02-01
申请号：US11486271
申请日：2006-07-14
IPC分类号： H01L21/8234
CPC分类号： G01N21/31
摘要： A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
摘要翻译： 一种用于评估半导体层的方法包括用光照射在衬底上的半导体层; 测量半导体层中激子特有的光谱; 并分析光谱的光谱特征的拓宽因子。 该方法以高精度快速测量半导体层的表面状态。
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公开(公告)号：US20070132021A1
公开(公告)日：2007-06-14
申请号：US11445181
申请日：2006-06-02
IPC分类号： H01L29/76
CPC分类号： H01L29/7783 , H01L29/0891 , H01L29/42316 , H01L29/66462 , H01L29/66856 , H01L29/8128
摘要： A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.
摘要翻译： 半导体器件包括具有凹部的基板，在基板的凹部中的栅电极以及设置在栅电极的相对侧上的源电极和漏电极。 绝缘膜至少在栅电极的表面和凹部中的除了栅电极所在的部分之外的部分上，并且与源电极连接的屏蔽电极位于绝缘膜的一部分之间 栅电极和漏电极。
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