发明授权
US07662646B2 Plasma processing method and plasma processing apparatus for performing accurate end point detection
有权
用于执行精确终点检测的等离子体处理方法和等离子体处理装置
- 专利标题: Plasma processing method and plasma processing apparatus for performing accurate end point detection
- 专利标题(中): 用于执行精确终点检测的等离子体处理方法和等离子体处理装置
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申请号: US11687428申请日: 2007-03-16
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公开(公告)号: US07662646B2公开(公告)日: 2010-02-16
- 发明人: Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
- 申请人: Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-075308 20060317
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.
公开/授权文献
- US20080070327A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 公开/授权日:2008-03-20
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