公开(公告)号：US20100089532A1

公开(公告)日：2010-04-15

申请号：US12637955

申请日：2009-12-15

申请人： Kosuke OGASAWARA ,  Susumu Saito ,  Syuji Nozawa

发明人： Kosuke OGASAWARA ,  Susumu Saito ,  Syuji Nozawa

IPC分类号： H01L21/3065

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： A plasma processing apparatus for generating a plasma of a processing gas by applying a high frequency power to an electrode provided in a processing chamber and processing a substrate using the plasma is provided. The plasma processing apparatus includes an optical data detection unit, a data storage unit and a control unit. The optical data detection unit detects optical data when plasma processing the substrate. The data storage unit stores correlation data representing a correlation between type data corresponding to a plurality of types classified based on a type of a mask or a film to be processed disposed on the substrate and optical data to be detected by the optical data detection unit, and end point detection setting data sets, each of the setting data sets serving to detect a plasma processing end point and corresponding to one of the types.

摘要翻译： 提供了一种等离子体处理装置，其通过向设置在处理室中的电极施加高频功率并使用等离子体处理衬底来产生处理气体的等离子体。 等离子体处理装置包括光学数据检测单元，数据存储单元和控制单元。 光学数据检测单元在等离子体处理衬底时检测光学数据。 数据存储单元存储表示与基于掩膜的类型分类的多种类型的类型数据之间的相关性的相关性数据，以及由光学数据检测单元检测的要被检测的光学数据， 和终点检测设定数据组，每个设定数据组用于检测等离子体处理终点并对应于其中一种类型。

公开(公告)号：US08580077B2

公开(公告)日：2013-11-12

申请号：US12637955

申请日：2009-12-15

申请人： Kosuke Ogasawara ,  Susumu Saito ,  Syuji Nozawa

发明人： Kosuke Ogasawara ,  Susumu Saito ,  Syuji Nozawa

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： A plasma processing apparatus for generating a plasma of a processing gas by applying a high frequency power to an electrode provided in a processing chamber and processing a substrate using the plasma is provided. The plasma processing apparatus includes an optical data detection unit, a data storage unit and a control unit. The optical data detection unit detects optical data when plasma processing the substrate. The data storage unit stores correlation data representing a correlation between type data corresponding to a plurality of types classified based on a type of a mask or a film to be processed disposed on the substrate and optical data to be detected by the optical data detection unit, and end point detection setting data sets, each of the setting data sets serving to detect a plasma processing end point and corresponding to one of the types.

摘要翻译： 提供了一种等离子体处理装置，其通过向设置在处理室中的电极施加高频功率并使用等离子体处理衬底来产生处理气体的等离子体。 等离子体处理装置包括光学数据检测单元，数据存储单元和控制单元。 光学数据检测单元在等离子体处理衬底时检测光学数据。 数据存储单元存储表示与基于掩膜的类型分类的多种类型的类型数据之间的相关性的相关数据，以及由光学数据检测单元检测的要被检测的光学数据， 和终点检测设定数据组，每个设定数据组用于检测等离子体处理终点并对应于其中一种类型。

公开(公告)号：US07662646B2

公开(公告)日：2010-02-16

申请号：US11687428

申请日：2007-03-16

申请人： Kosuke Ogasawara ,  Susumu Saito ,  Syuji Nozawa

发明人： Kosuke Ogasawara ,  Susumu Saito ,  Syuji Nozawa

IPC分类号： H01L21/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.

摘要翻译： 在等离子体处理方法中，通过使用多元分析获得基板类型数据和光学数据之间的相关性; 基于等离子体处理时的相关性，从光学数据获得基板型数据; 并且通过使用所获得的基板类型数据来确定基板类型。 此外，从设置数据组中选择与所确定的基板类型相对应的设置数据集，每个设置数据组用于检测等离子体处理的等离子体处理结束点，每个设置数据集被预先存储在数据存储单元中; 基于所选择的设置数据集来检测等离子体处理的终点; 并且在检测到的终点处终止等离子体处理。

公开(公告)号：US20080070327A1

公开(公告)日：2008-03-20

申请号：US11687428

申请日：2007-03-16

申请人： Kosuke OGASAWARA ,  Susumu Saito ,  Syuji Nozawa

发明人： Kosuke OGASAWARA ,  Susumu Saito ,  Syuji Nozawa

IPC分类号： H01L21/66 ,  C23F1/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.

摘要翻译： 在等离子体处理方法中，通过使用多元分析获得基板类型数据和光学数据之间的相关性; 基于等离子体处理时的相关性，从光学数据获得基板型数据; 并且通过使用所获得的基板类型数据来确定基板类型。 此外，从设置数据组中选择与所确定的基板类型相对应的设置数据集，每个设置数据组用于检测等离子体处理的等离子体处理结束点，每个设置数据集被预先存储在数据存储单元中; 基于所选择的设置数据集来检测等离子体处理的终点; 并且在检测到的终点处终止等离子体处理。

公开(公告)号：US07481944B2

公开(公告)日：2009-01-27

申请号：US10860012

申请日：2004-06-04

申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

IPC分类号： G01L21/30 ,  G01B9/02

CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lb1。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。

公开(公告)号：US20090095421A1

公开(公告)日：2009-04-16

申请号：US12314083

申请日：2008-12-03

申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

IPC分类号： C23F1/08

CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lbi. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lbi。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。

公开(公告)号：US20050029228A1

公开(公告)日：2005-02-10

申请号：US10860012

申请日：2004-06-04

申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

IPC分类号： H01L21/3065 ,  C23F1/00 ,  G01B11/06 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/66

CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lb1。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。