Invention Grant
- Patent Title: Method of forming relatively continuous silicide layers for semiconductor devices
- Patent Title (中): 形成半导体器件相对连续的硅化物层的方法
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Application No.: US11247770Application Date: 2005-10-11
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Publication No.: US07662707B2Publication Date: 2010-02-16
- Inventor: Sug-Woo Jung , Gil-Heyun Choi , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung
- Applicant: Sug-Woo Jung , Gil-Heyun Choi , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2004-0080805 20041011
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44 ; H01L21/4763
Abstract:
Methods of forming metal silicide layers in a semiconductor device are provided in which a first metal silicide layer may be formed on a substrate, where the first metal silicide layer comprises a plurality of fragments of a metal silicide that are separated by one or more gaps. A conductive material is selectively deposited into at least some of the gaps in the first metal silicide layer in order to electrically connect at least some of the plurality of fragments.
Public/Granted literature
- US20060079074A1 Method of forming relatively continuous silicide layers for semiconductor devices Public/Granted day:2006-04-13
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