Invention Grant
- Patent Title: Nanowire capacitor and methods of making same
- Patent Title (中): 纳米线电容器及其制作方法
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Application No.: US11525121Application Date: 2006-09-22
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Publication No.: US07667296B2Publication Date: 2010-02-23
- Inventor: David Stumbo , Jian Chen , David Heald , Yaoling Pan
- Applicant: David Stumbo , Jian Chen , David Heald , Yaoling Pan
- Applicant Address: US CA Palo Alto
- Assignee: Nanosys, Inc.
- Current Assignee: Nanosys, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/93
- IPC: H01L29/93

Abstract:
A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion insulator and a contact coupled to the nanowire.
Public/Granted literature
- US20070012985A1 Nanowire capacitor and methods of making same Public/Granted day:2007-01-18
Information query
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