发明授权
- 专利标题: Semiconductor device, testing and manufacturing methods thereof
- 专利标题(中): 半导体器件,其测试和制造方法
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申请号: US11365492申请日: 2006-03-02
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公开(公告)号: US07668027B2公开(公告)日: 2010-02-23
- 发明人: Kengo Imagawa , Masami Makuuchi , Ritsuro Orihashi , Yoshiharu Ikeda , Koichiro Eguchi
- 申请人: Kengo Imagawa , Masami Makuuchi , Ritsuro Orihashi , Yoshiharu Ikeda , Koichiro Eguchi
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-251754 20050831
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
In order to easily perform a timing test on a memory interface included in a semiconductor device so as to satisfy a restriction on latency, the present invention provides a semiconductor device with the memory interface including: a clock output terminal that outputs a clock signal associated with an operation of a memory connected to the memory interface; a command terminal that outputs a command signal associated with control of a state of the memory; a data terminal that exchanges a data signal with the memory; and a data strobe terminal that exchanges a data strobe signal for establishing the data signal. This semiconductor device includes a testing terminal that outputs in advance a signal for starting a test on the memory interface apart from the command signal.
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