A method of operating a non-volatile memory device reduces a time for discharging a precharged voltage when a program operation or a read operation is performed, thereby decreasing a total operation time of the non-volatile memory device. The non-volatile memory device discharges a bit line and a word line using only a control signal without reading an algorithm block when a precharged voltage is discharged. The method of operating a non-volatile memory device includes detecting an operation command; generating algorithm blocks for generating an operation voltage, for precharging a bit line and a word line, and for performing a specific operation in accordance with the operation command; outputting a discharge enable control signal for the bit line and the word line; and reading an algorithm of turning off and discharging a voltage generating means for generating the operation voltage.