- 专利标题: Substrate polishing apparatus and substrate polishing method
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申请号: US10559135申请日: 2004-06-17
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公开(公告)号: US07670206B2公开(公告)日: 2010-03-02
- 发明人: Tetsuji Togawa , Koichi Fukaya , Mitsuo Tada , Taro Takahashi , Yasunari Suto
- 申请人: Tetsuji Togawa , Koichi Fukaya , Mitsuo Tada , Taro Takahashi , Yasunari Suto
- 申请人地址: JP Tokyo
- 专利权人: Ebara Corporation
- 当前专利权人: Ebara Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2003-174144 20030618
- 国际申请: PCT/JP2004/008855 WO 20040617
- 国际公布: WO2004/113020 WO 20041229
- 主分类号: B24B49/00
- IPC分类号: B24B49/00
摘要:
The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).