公开(公告)号：US20150251313A1

公开(公告)日：2015-09-10

申请号：US14628860

申请日：2015-02-23

申请人： Hiroshi FUJIMOTO ,  Kenji INUKAI ,  Taro TAKAHASHI

发明人： Hiroshi FUJIMOTO ,  Kenji INUKAI ,  Taro TAKAHASHI

IPC分类号： B25J9/16

CPC分类号： B25J9/163 ,  G05B11/36 ,  G05B13/02 ,  G05B2219/41144

摘要： A control device includes first driving means for driving a plant through torque transfer means, placed on a driving side, second driving means for driving the plant, placed on a plant side, reference input generation means for generating a torque reference input value for driving the first and second driving means, and resonance cancellation means for canceling out resonance by multiplying the torque reference input value by a first gain including an inertia coefficient, a viscosity coefficient and a reduction ratio of the torque transfer means on the driving side and on the plant side and multiplying the torque reference input value by a second gain including the inertia coefficient, the viscosity coefficient and the reduction ratio of the torque transfer means on the driving side and on the plant side, and thereby adjusting a ratio of the torque reference input value for the first and second driving means.

摘要翻译： 控制装置包括第一驱动装置，用于通过设置在驱动侧的扭矩传递装置驱动工厂，用于驱动工厂的第二驱动装置，放置在工厂侧;参考输入产生装置，用于产生用于驱动装置的转矩基准输入值 第一驱动装置和第二驱动装置，以及谐振消除装置，用于通过将转矩基准输入值乘以包括驱动侧和工厂上的转矩传递装置的惯性系数，粘度系数和减速比的第一增益来消除共振 并且将转矩基准输入值乘以包括驱动侧和工厂侧的转矩传递装置的惯性系数，粘度系数和减速比的第二增益，从而调整转矩基准输入值 用于第一和第二驱动装置。

公开(公告)号：US08657644B2

公开(公告)日：2014-02-25

申请号：US13313407

申请日：2011-12-07

申请人： Mitsuo Tada ,  Taro Takahashi

发明人： Mitsuo Tada ,  Taro Takahashi

IPC分类号： B24B49/10

CPC分类号： B24B37/013 ,  B24B49/105

摘要： An eddy current sensor is used for detecting a metal film (or conductive film) formed on a surface of a substrate such as a semiconductor wafer. The eddy current sensor includes a sensor coil disposed near a metal film or a conductive film formed on a substrate, and the sensor coil includes a detection coil operable to detect an eddy current produced in the metal film or the conductive film. The detection coil includes a coil formed by winding a wire by a single row and plural layers, the row being defined as a direction perpendicular to the substrate and the layer being defined as a direction parallel to the substrate.

摘要翻译： 涡电流传感器用于检测在诸如半导体晶片的基板的表面上形成的金属膜（或导电膜）。 涡流传感器包括设置在形成在基板上的金属膜或导电膜附近的传感器线圈，并且传感器线圈包括可操作以检测在金属膜或导电膜中产生的涡流的检测线圈。 检测线圈包括通过以单行和多层缠绕线形成的线圈，该行被定义为垂直于衬底的方向，并且该层被定义为平行于衬底的方向。

公开(公告)号：US08454407B2

公开(公告)日：2013-06-04

申请号：US12511344

申请日：2009-07-29

申请人： Taro Takahashi ,  Motohiro Niijima ,  Akihiko Ogawa

发明人： Taro Takahashi ,  Motohiro Niijima ,  Akihiko Ogawa

IPC分类号： B24B49/12

CPC分类号： B24B37/013 ,  B24B49/105

摘要： A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.

摘要翻译： 抛光方法抛光和平坦化基底。 将衬底压在旋转的抛光台上的抛光表面上。 在抛光期间，抛光台旋转，并且通过设置在抛光台中的涡流传感器扫描基板的抛光表面。 监测涡流传感器的输出，并根据涡流传感器输出的变化检测基板损坏。 此外，监视通过扫描基板的表面而获得的端点检测传感器的输出，并且根据端点检测传感器的输出的变化来检测抛光终点。 在检测到抛光终点之后，监测端点检测传感器或另一传感器的输出，并且检测留在基板的一部分上的膜。

公开(公告)号：US08421421B2

公开(公告)日：2013-04-16

申请号：US13414999

申请日：2012-03-08

申请人： Masanori Hori ,  Manabu Yamagata ,  Taro Takahashi

发明人： Masanori Hori ,  Manabu Yamagata ,  Taro Takahashi

IPC分类号： H02J7/04 ,  H02J7/16

CPC分类号： H01M10/441 ,  H02J7/0022 ,  H02J9/061

摘要： In a storage system provided with a plurality of storage modules, the rated power consumption can be reduced. The storage system is provided with a charge control unit. The charge control unit stops, when detecting that a predetermined number of a plurality of battery modules are during battery charging, the battery charging in the remaining battery modules.

摘要翻译： 在具有多个存储模块的存储系统中，可以降低额定功率消耗。 存储系统设有充电控制单元。 当在电池充电期间检测到预定数量的多个电池模块时，充电控制单元停止，剩余电池模块中的电池充电。

公开(公告)号：US20130065493A1

公开(公告)日：2013-03-14

申请号：US13562441

申请日：2012-07-31

申请人： Taro TAKAHASHI

发明人： Taro TAKAHASHI

IPC分类号： B24B37/013 ,  B24B7/00 ,  B24B49/10

CPC分类号： B24B49/105 ,  B24B37/013 ,  H01L22/14 ,  H01L22/26

摘要： A method of monitoring a thickness of a conductive film on a substrate during polishing of the substrate with use of an eddy current sensor is provided. This method includes: polishing the conductive film by pressing the substrate against a polishing surface on the rotating polishing table; obtaining output signal of the eddy current sensor during polishing; calculating an amount of output adjustment of the eddy current sensor using the output signal obtained when the substrate is not present above the eddy current sensor; with use of the amount of output adjustment, correcting the output signal obtained when the substrate is present above the eddy current sensor; and monitoring the thickness of the conductive film based on the corrected output signal.

摘要翻译： 提供了一种使用涡流传感器在衬底抛光期间监测衬底上的导电膜的厚度的方法。 该方法包括：通过将基板压靠在旋转的抛光台上的抛光表面上来研磨导电膜; 在抛光期间获得涡流传感器的输出信号; 使用在涡电流传感器上方不存在基板时获得的输出信号来计算涡流传感器的输出调整量; 利用输出量的调整，校正当基板存在于涡电流传感器上方时获得的输出信号; 以及基于经校正的输出信号监测导电膜的厚度。

公开(公告)号：US07960188B2

公开(公告)日：2011-06-14

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/00 ,  H01L21/302 ,  G01R31/26

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括进行第一抛光处理，在第一抛光处理之后，在第二抛光处理之后进行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光工艺。 在第二抛光工艺和第三抛光工艺期间，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时，第三抛光处理结束。

公开(公告)号：US20110124269A1

公开(公告)日：2011-05-26

申请号：US13005684

申请日：2011-01-13

申请人： Mitsuo TADA ,  Taro Takahashi

发明人： Mitsuo TADA ,  Taro Takahashi

IPC分类号： B24B51/00 ,  G01R33/12

CPC分类号： B24B37/013 ,  B24B49/105

摘要： An eddy current sensor is used for detecting a metal film (or conductive film) formed on a surface of a substrate such as a semiconductor wafer. The eddy current sensor includes a sensor coil disposed near a metal film or a conductive film formed on a substrate, and the sensor coil includes a detection coil operable to detect an eddy current produced in the metal film or the conductive film. The detection coil includes a coil formed by winding a wire by a single row and plural layers, the row being defined as a direction perpendicular to the substrate and the layer being defined as a direction parallel to the substrate.

摘要翻译： 涡电流传感器用于检测在诸如半导体晶片的基板的表面上形成的金属膜（或导电膜）。 涡流传感器包括设置在形成在基板上的金属膜或导电膜附近的传感器线圈，并且传感器线圈包括可操作以检测在金属膜或导电膜中产生的涡流的检测线圈。 检测线圈包括通过以单行和多层缠绕线形成的线圈，该行被定义为垂直于衬底的方向，并且该层被定义为平行于衬底的方向。

公开(公告)号：US07854646B2

公开(公告)日：2010-12-21

申请号：US12688021

申请日：2010-01-15

申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有研磨面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

公开(公告)号：US20100112901A1

公开(公告)日：2010-05-06

申请号：US12688021

申请日：2010-01-15

申请人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/04 ,  B24B49/10

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

公开(公告)号：US20100035516A1

公开(公告)日：2010-02-11

申请号：US12511344

申请日：2009-07-29

申请人： Taro TAKAHASHI ,  Motohiro Niijima ,  Akihiko Ogawa

发明人： Taro TAKAHASHI ,  Motohiro Niijima ,  Akihiko Ogawa

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B49/105

摘要： The present invention relates to a polishing method and apparatus for polishing and planarizing an object to be polished (substrate) such as a semiconductor wafer. The substrate as an object to be polished is pressed against a polishing surface on a rotating polishing table in the polishing method. During polishing of the substrate, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor obtained by scanning the surface, being polished, of the substrate is monitored, and damage of the substrate is detected from a change in the output of the eddy current sensor. Further, an output of an endpoint detecting sensor obtained by scanning the surface, being polished, of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the endpoint detecting sensor or a different sensor is monitored, and monitoring of the remaining film for detecting a film left on a part of the substrate is performed.

摘要翻译： 本发明涉及用于抛光和平面化待抛光物体（衬底）如半导体晶片的抛光方法和装置。 作为研磨对象的基板在研磨方法中被压靠在旋转研磨台上的研磨面上。 在抛光基板期间，旋转抛光台，并且通过设置在抛光台中的涡流传感器来扫描基板的抛光表面。 监测通过扫描基板表面而获得的涡流传感器的输出，并根据涡电流传感器的输出的变化来检测基板的损坏。 此外，监视通过扫描基板的表面而获得的端点检测传感器的输出，并根据端点检测传感器的输出的变化来检测抛光终点。 在检测到抛光终点之后，监视端点检测传感器或不同传感器的输出，并且执行用于检测留在基板的一部分上的膜的剩余膜的监视。