发明授权
- 专利标题： Semiconductor device and method for manufacture
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11628130申请日： 2005-05-25
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公开(公告)号： US07671390B2公开(公告)日： 2010-03-02
- 发明人: Jan Sonsky , Erwin A. Hijzen , Michael A. A. In 'T Zandt
- 申请人： Jan Sonsky , Erwin A. Hijzen , Michael A. A. In 'T Zandt
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： GB0411971.5 20040528
- 国际申请： PCT/IB2005/051715 WO 20050525
- 国际公布： WO2005/117073 WO 20051208
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L29/00
摘要：
A semiconductor device is formed with a lower field plate (32) and optional lateral field plates (34) around semiconductor (20) in which devices are formed, for example power FETs or other transistor or diode types. The semiconductor device is manufactured by forming trenches with insulated sidewalls, etching cavities (26) at the base of the trenches which join up and then filling the trenches with conductor (30).
公开/授权文献
- US20070246754A1 Semiconductor Device and Method for Manufacture 公开/授权日：2007-10-25
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