发明授权
- 专利标题: Method of fabricating Schottky barrier transistor
- 专利标题(中): 制造肖特基势垒晶体管的方法
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申请号: US12149894申请日: 2008-05-09
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公开(公告)号: US07674665B2公开(公告)日: 2010-03-09
- 发明人: Sung-ho Park , Jin-seo Noh , Joong S. Jeon , Eun-ju Bae
- 申请人: Sung-ho Park , Jin-seo Noh , Joong S. Jeon , Eun-ju Bae
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2007-0136399 20071224
- 主分类号: H01L21/338
- IPC分类号: H01L21/338
摘要:
Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.
公开/授权文献
- US20090162983A1 Method of fabricating schottky barrier transistor 公开/授权日:2009-06-25