发明授权
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12005444申请日: 2007-12-26
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公开(公告)号: US07674668B2公开(公告)日: 2010-03-09
- 发明人: Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
- 申请人: Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Townsend and Townsend and Crew LLP
- 优先权: JP2006-348817 20061226
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/265
摘要:
After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.
公开/授权文献
- US20080188043A1 Method of manufacturing a semiconductor device 公开/授权日:2008-08-07